Abstract
The switching speed of a MOSFET circuit is determined by how fast the gate capacitors plus all the parasitic capacitors can be charged. The rate of charging is dominated by the device transconductance, gm, which determines the current output, and the total capacitance. As minimum feature sizes are scaled down and chip size increases, interconnect characteristics rather than device characteristics determine the net capacitance. To improve switching speed one has to reduce the total capacitance and maximize the transconductance. Since the devices are so small, they can be described by conventional lumped circuit models even at high speed.
Keywords
Contact Resistance Logic Gate PMOS Transistor Gate Capacitance Specific Contact Resistance
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