Abstract
Large transparent specimens of polycrystalline zinc oxide with c-axis orientation were prepared by the vapor transport method. The obtained specimens were of n-type semiconductor with resistivity below 50 Ωcm−1 at room temperature. When mirror-finished samples obtained by mechanical polishing were contacted under mechanical pressure, the reversible large non-ohmic I-V behavior similar to that of a ZnO varistorwas observed. This non-ohmic behavior disappeared as a result of heating the sample above 400°C or Ar ion etching. The results of XPS measurement suggested the presence of adsorbed OH− on the as-polished surface, which formed the Schottky-type energy barrier with a trapped conduction electron.
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Fujitsu, S., Nakanishi, K., Hidaka, S., Awakura, Y. (1998). The Energy Barrier At The Interface Of ZnO Contact. In: Tomsia, A.P., Glaeser, A.M. (eds) Ceramic Microstructures. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5393-9_70
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DOI: https://doi.org/10.1007/978-1-4615-5393-9_70
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