Flash Memories pp 153-239 | Cite as

Physical Aspects of Cell Operation and Reliability

  • Luca Selmi
  • Claudio Fiegna
Chapter

Abstract

This chapter overviews the basic physical effects involved in programming and erasing of Flash memory cells, to provide the background for a deeper understanding of their operation and reliability. In particular, tunneling and high field transport are treated and the associated phenomena in MOS-FETs and Flash cells are described by means of measurements and simulations. Device degradation induced by charge injection into thin silicon dioxide layers is also briefly discussed.

Keywords

Impact Ionization Flash Memory Interface Trap Cell Operation Boltzmann Transport Equation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Springer Science+Business Media New York 1999

Authors and Affiliations

  • Luca Selmi
    • 1
  • Claudio Fiegna
    • 2
  1. 1.Dipartimento di Ingegneria ElettricaUniversità di UdineUdineItaly
  2. 2.Dipartimento di IngegneriaUniversità di FerraraFerraraItaly

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