The Simulation of Thermomechanically Induced Stress in Plastic Encapsulated IC Packages pp 47-68 | Cite as
The Correlation of Modelling with Measurements and Failure Modes
Abstract
The results of the simulations undertaken in chapter 3 indicate that both the die and the package itself are under significant levels of stress after encapsulation. The stress distributions are quite complex and change rapidly at the corners and edges of the die. It is essential to have confidence in the simulations, and to be able to validate the distributions of stress, if the F.E. technique is to be a useful tool in package design. There are at least three ways of achieving this aim. The first is to compare the magnitude and distribution of stress in packaged ICs measured with on-chip stress sensors, to distributions of stress predicted by F.E. techniques. The second approach is to determine if the magnitude, location, and nature of the stress distributions correlate with observed failure mechanisms. The third approach is to compare the measured bending or warpage of packages after encapsulation with that predicted by F.E. techniques. This latter approach is addressed in chapter 5.
Keywords
Wire Bond Gold Wire Ball Bond Shear Stress Component Molding CompoundPreview
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