Low Noise Dc Squids for the 1990S

  • Mark B. Ketchen
Chapter

Abstract

In the 1980s we have seen the successful introduction of planar coupling schemes for dc SQUIDs, the achievement of coupled energy sensitivity near the quantum limit, significant advances in integrated SQUID detectors, and a shift from Pb-alloy to all-refractory technology. The discovery of high-Tc superconductivity in 1986 was soon followed by the demonstration of high-Tc SQUIDs, with bulk and thin-film versions now operating at or above 77K. The 1990s will bring practical low-Tc dc SQUIDs, 0.05mm2 or less in area, with tightly coupled 2/iH input coils, smooth, well-behaved voltage-flux characteristics, very small flux creep related hysteresis, and coupled energy sensitivity at or near the quantum limit at 4.2K. There will be an increased emphasis on the design and development of application specific integrated detectors. All-refractory Nb-based technology will dominate the low-Tc arena and direct coupling to semiconductor capability should quicken the pace and lower the cost of SQUID development and production. High-Tc SQUIDs will follow suit with a significant time delay as our understanding of high-Tc materials and our ability to work with them advances.

Keywords

Tunnel Junction Noise Performance Input Coil Energy Sensitivity Flux Noise 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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References

  1. 1.
    R.C. Jaklevic, J. Lambe, A.H. Silver, and J.E. Mercereau, Phys. Rev. Lett. 12, 159 (1964).ADSCrossRefGoogle Scholar
  2. 2.
    B.D. Josephson, Phys. Lett. 1, 251 (1962); Adv. Physics 14, 419 (1965).ADSMATHCrossRefGoogle Scholar
  3. 3.
    V. Radhakrishnan and V.L. Newhouse, J. Appl. Phys. 42, 129 (1971).ADSCrossRefGoogle Scholar
  4. 4.
    J.H. Claassen, J. Appl. Phys. 46, 2268 (1975).ADSCrossRefGoogle Scholar
  5. 5.
    CD. Tesche and J. Clarke, J. Low Temp. Phys. 29, 301 (1977).ADSCrossRefGoogle Scholar
  6. 6.
    M.B. Ketchen, IEEE Trans. Magn. MAG-17, 387 (1981).ADSCrossRefGoogle Scholar
  7. 7.
    W.C. Stewart, Appl. Phys. Lett 12, 277 (1968).ADSCrossRefGoogle Scholar
  8. 8.
    D.E. McCumber, J. Appl. Phys. 39, 3113 (1968).ADSCrossRefGoogle Scholar
  9. 9.
    R.P. Giffard, R.A. Webb, and J.C. Wheatley, J. Low Temp. Phys. 6, 533 (1972).ADSCrossRefGoogle Scholar
  10. 10.
    J. Clarke, W.J. Goubau, and M.B. Ketchen, J. Low Temp. Phys. 25, 99 (1976).ADSCrossRefGoogle Scholar
  11. 11.
    J.M. Jaycox and M.B. Ketchen, IEEE Trans. Magn. MAG-17. 400 (1981); M.B. Ketchen and J.M. Jaycox, Appl. Phys Lett. 40, 736 (1982).ADSCrossRefGoogle Scholar
  12. 12.
    M.B. Ketchen, W.M. Goubau, J. Clarke, and G.B. Donaldson, J. Appl. Phys. 44, 4111 (1978).ADSCrossRefGoogle Scholar
  13. 13.
    M.B. Ketchen, T. Kopley, and H. Ling. Appl. Phys. Lett. 44, 1008 (1984).ADSCrossRefGoogle Scholar
  14. 14.
    M. Gurvitch, M.A. Washington and H.A. Huggins, Appl. Phys. Lett. 42, 472 (1983).ADSCrossRefGoogle Scholar
  15. 15.
    J.E. Zimmermann, J.A. Beall, M.W. Cromar, and R.H. Ono, Appl. Phys. lett. 51, 617 (1987).ADSCrossRefGoogle Scholar
  16. 16.
    R.H. Koch, W.J. Gallagher, B. Bumble, and W.Y. Lee, Appl. Phys. Lett. 54, 951 (1989).ADSCrossRefGoogle Scholar
  17. 17.
    B. Oh, R.H. Koch, W.J. Gallagher, V. Foglietti, G. Koren, and A. Gupta, Appl. Phys. Lett. 56, 2575 (1990).ADSCrossRefGoogle Scholar
  18. 18.
    F.C. Wellstood, J.J. Kingston, and J. Clarke, Appl. Phys. Lett., 56, 2336 (1990).ADSCrossRefGoogle Scholar
  19. 19.
    D.J. Van Harlingen, R.H. Koch, and J. Clarke, Appl. Phys. Lett. 41, 197 (1982).ADSCrossRefGoogle Scholar
  20. 20.
    CD. Tesche, K.H. Brown, A.C. Callegari, M.-M. Chen, J.H. Greiner H.C. Jones, M.B. Ketchen, K.K. Kim, A.W. Kleinsasser, H.A. Notarys, G. Proto, R.H. Wang, and T. Yogi, IEEE Trans. Magn. MAQ-21. 1032 (1985).ADSCrossRefGoogle Scholar
  21. 21.
    V. Foglietti, W.J. Gallagher, M.B. Ketchen, A.W. Kleinsasser R.H. Koch, S.I. Raider and R.L. Sandstrom, Appl. Phys. Lett. 49, 1393, (1986).ADSCrossRefGoogle Scholar
  22. 22.
    D.D. Awschalom, J.R. Rozen, M.B. Ketchen, W.J. Gallagher, A.W. Kleinsasser, R.L. Sandstrom, and B. Bumble, Appl. Phys. Lett. 53, 2108 (1988).ADSCrossRefGoogle Scholar
  23. 23.
    M.B. Ketchen, M. Bhushan, S.B. Kaplan, and W.J. Gallagher, “Low Noise dc SQUIDs Fabricated in Nb-Al203-Nb Trilayer Technology”, to be published in the proceedings of the 1990 Applied Superconductivity Conference.Google Scholar
  24. 24.
    C.T. Rogers and R.A. Buhrman, W.J. Gallagher, S.I. Raider, A.W. Kleinsasser, and R.L. Sandstrom, IEEE Trans Magn. MAG-23, 1658 (1987)ADSCrossRefGoogle Scholar
  25. 25.
    V. Foglietti, W.J. Gallagher, M.B. Ketchen, A.W. Kleinsasser, R.H. Koch, and R.L. Sandstrom, Appl. Phys. Lett. 55, 1451 (1989).ADSCrossRefGoogle Scholar
  26. 26.
    W.H. Chang, J. Appl. Phys. 50, 8129 (1979).ADSCrossRefGoogle Scholar
  27. 27.
    M.B. Ketchen, W.J. Gallagher, A.W. Kleinsasser, S. Murphy and J.R. Clem in SQUID ′85. edited by H.D. Hahlbohm and H. Lubbig (Walter de Gruyter, Berlin, New York, 1985), 865.Google Scholar
  28. 28.
    M.B. Ketchen, “Design Considerations for dc SQUIDs Fabricated in Deep Sub-μm Technology”, to be published in the proceedings of the 1990 Applied Superconductivity Conference.Google Scholar
  29. 29.
    R.P. Huebener, R.T. Kampwirth, and J.R. Clem, J. Low Temp. Phys. 6, 275 (1972).ADSCrossRefGoogle Scholar
  30. 30.
    M.B. Ketchen, J. Appl. Physics 58, 4322 (1985).ADSCrossRefGoogle Scholar
  31. 31.
    M.B. Ketchen, D.D. Awschalom, W.J. Gallagher, A.W. Kleinsasser, R.L. Sandstrom, J.R. Rozen, and B. Bumble, IEEE Trans. Magn. MAG-25, 1212 (1989).ADSCrossRefGoogle Scholar
  32. 32.
    D.D. Awschalom, J. Warnock, and S. vonMolnar, Phys. Rev. Lett. 58, 812 (1987).ADSCrossRefGoogle Scholar
  33. 33.
    H. Kroger, L.N. Smith and D.W. Jillie, Appl. Phys. Lett. 39, 280 (1981).ADSCrossRefGoogle Scholar
  34. 34.
    S. Nagasawa, H. Tsuge and Y. Wada, IEEE El. Dev. Lett. 9, 414 (1988).ADSCrossRefGoogle Scholar
  35. 35.
    R. Gross, P. Chaudhari, M. Kawasaki, M.B. Ketchen, and A. Gupta, Appl. Phys. Lett. 57, 727 (1990).ADSCrossRefGoogle Scholar
  36. 36.
    Commercial SQUID data shows representative performance for S.H.E./B.T.I. rf and dc SQUIDs, Biomagnetic Technologies, Inc., 4174 Sorrento Valley Blvd., P.O. Box 210079, San Diego, CA 92121.Google Scholar

Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • Mark B. Ketchen
    • 1
  1. 1.IBM Research Division Thomas J. Watson Research Center Yorktown HeightsUSA

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