The radiation environment in a SSC detector operating at a luminosity of 1033 cm−2s−1 will put stringent requirements on radiation hardness of the electronics. Over the expected 10 year life-time of a large detector, ionizing radiation doses of up to 20 MRad and neutron fluences of 1016 neutrons/cm2 are projected. At a luminosity of 1034 cm−2s−1 even higher total doses are expected. The effect of this environment have been simulated by exposing CMOS/bulk and CMOS/SOS devices from monolithic processes to neutrons and ionizing radiation. Leakage currents, noise variations, and DC characteristics have been measured before and after exposure in order to evaluate the effects of the irradiations. As expected the device characteristics remained virtually unchanged by neutron irradiation, while ionizing radiation caused moderate degradation of performance.
KeywordsNeutron Irradiation Gate Oxide Threshold Shift Neutron Fluences Hole Trapping
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