Quantum-Chemical Investigation of Adsorption and Surface Migration of Atoms and Molecules on Si(111) and Si(100) Surfaces

  • M. P. Ruzaikin
  • A. B. Svechnikov
Chapter
Part of the Poct Kphctannob, Rost Kristallov, Growth of Crystals book series (GROC, volume 18)

Abstract

Characteristics of interatomic interactions and structural features in the phase contact region are of great interest in studying growth processes of crystals and epitaxial layers of semiconductors. Two phases come into contact through an adsorption layer in gas-transport systems and during molecular-beam growth. Processes occurring in the adsorption layers (adsorption, desorption, surface diffusion, possible chemical reactions) are known to control the crystallization rate and the quality of the crystals and epitaxial layers grown. Investigations of thermodynamic properties and kinetic processes occurring in adsorption layers require knowledge of the adsorption energy, the surface potential relief relative to adparticles, and changes in the geometric and energetic characteristics of molecules on adsorption [1, 2, 3].

Keywords

Adsorption Energy Surface Atom Adsorption Position Dime Atom Uniform Electron Density Distribution 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Consultants Bureau, New York 1992

Authors and Affiliations

  • M. P. Ruzaikin
  • A. B. Svechnikov

There are no affiliations available

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