BiCMOS Digital Integrated Circuits

  • Sherif H. K. Embabi
  • Abdellatif Bellaouar
  • Mohamed I. Elmasry
Chapter
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 193)

Abstract

In this chapter, we introduce a variety of digital BiCMOS circuit structures such as the totem-pole BiCMOS gate and the merged MOS/bipolar current mode circuits. This chapter starts with a brief comparison between MOS and bipolar devices in terms of their current drive capabilities. The advantage of using bipolar devices for the totem-pole structure is demonstrated in Section 7.2. In that, we study the DC and transient characteristics of the BiCMOS inverter. The transient behaviour is analyzed in detail to derive a delay model. This model is then used to understand the critical device and circuit parameters for the design of the BiCMOS gate. It also serves as the basis for a comparison between CMOS and BiCMOS for different loading conditions. In Section 7.3, we discuss the performance of conventional totem-pole circuits for low power supply voltage. Several full-swing BiCMOS structures, which are suitable for low voltage applications, are introduced. In Section 7.4, we also consider the use of BiCMOS for integrating CMOS with current mode logic in a single system. Some of the basic cells required for such applications are introduced.

Keywords

Output Voltage Supply Voltage Load Capacitance Output Node Drain Current 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Springer Science+Business Media New York 1993

Authors and Affiliations

  • Sherif H. K. Embabi
    • 1
  • Abdellatif Bellaouar
    • 2
  • Mohamed I. Elmasry
    • 2
  1. 1.Texas A & M UniversityUSA
  2. 2.University of WaterlooCanada

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