Proposition of Effective Wavefunction for 2DEG within Modfet Heterostructures

Abstract

In this seminar we propose a form of effective wavefunctions for the 2-Dimensional Electron Gas (2DEG) confined within the channel of a Modulation-Doped Field Effect Transistor (MODFET). The wavefunction _Φ­n(x) of the n^th conduction sub-level is taken as a linear superposition \( \sum\limits_{j} {\{ {{{\text{c}}}_{{{\text{nj}}}}}{{\varphi }_{{{\text{nj}}}}}(x)\} } \) of harmonic oscillator eigenfunctions φ _nj(x)with a frequency ω _j(ξ) dependent upon the sheet density ξ of the 2DEG. For the ξ-dependence of w_j(ξ), we propose a rational function [jα/(β+ξ)] consistent with the requirements for low ξ (quantum limit) and high ξ (3D bulk limit) behaviour.