Localized States in GaAsBi and GaAs/GaAsBi Heterostructures

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Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 186)

Abstract

Deep- and shallow-level defects in device-quality GaAs1−x Bi x (x ≤ 10.9%) are investigated. Despite low-temperature growth, GaAs1−x Bi x emits intense band-edge photoluminescence, and GaAs0.975Bi0.025 shows lasing operation by optical pumping. The deep-level trap density is suppressed on the order of 1015 cm−3 because of a surfactant effect of the Bi atoms. The Bi-induced localized states generated by the interaction between spatially localized Bi states and the valence band of GaAs are continuously located up to ~90 meV from the valence band with a density of ~1 × 1017 cm−3. Despite concerns regarding the degradation of the hole mobility due to scattering at these Bi-induced localized states, the p-type doping masks the contribution of the Bi-induced states to the hole mobility, and a high hole mobility of 200 cm2 V−1 s−1 is achieved. By characterizing the superlattices, (Al)GaAs/GaAs1−x Bi x heterointerfaces have been proven to be smooth without distinct segregation and stable up to 700 °C. While the interface state density of ~9 × 1011 cm−2 eV−1 in a GaAs/GaAs1−x Bi x heterointerface cannot be reduced by annealing, it can be reduced by half by the insertion of a Bi graded layer into the heterointerface, presumably due to the mitigation of the differences in the metallic GaAs1−x Bi x and nonmetallic GaAs surfaces.

Keywords

Molecular Beam Epitaxy Rapid Thermal Annealing Hole Mobility Hole Density Interface State Density 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Notes

Acknowledgements

This work was partly supported by Grants-in-Aid for Scientific Research (A) and (B) from the Japan Society for the Promotion of Science. The authors would like to express their appreciation to Dr. W. Huang, Dr. G. Feng, Dr. Y. Takehara, Dr. Y. Tominaga, Mr. S. Murata, Mr. Y. Kinoshita, Mr. M. Yamakawa, Mr. K. Yamada, Mr. M. Itoh, Mr. S. Kashiyama, and Mr. M. Kado for their contribution to this work. The authors would also like to acknowledge Prof. O. Ueda, Kanazawa Institute of Technology, for his TEM observation. In addition, the authors would like to express their deep appreciation to Emeritus Prof. K. Oe, the pioneer of GaAsBi, for his continuous encouragement and stimulating discussions.

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Authors and Affiliations

  1. 1.Department of ElectronicsKyoto Institute of TechnologyKyotoJapan

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