The Time-Dependent Defect Spectroscopy

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Abstract

The time-dependent defect spectroscopy (TDDS) is an advancement of the technique to analyze random telegraph signals (RTS). RTS in the drain current of small-area MOSFETs has been used since the 1980s to study capture and emission times of charge carriers in individual traps in the gate insulator. These capture- and emission-time constants are the only electrically determined parameters of individual traps which provide information having the potential to identify the physical nature of these traps. The two main advantages of TDDS compared to RTS are that capture and emission times can be determined over a wide regime in gate bias, ranging from strong inversion to strong accumulation, and that TDDS signals from multiple traps can be analyzed more easily because they are less complex. This chapter is focused on explaining all the experimental aspects of TDDS, on preconditions with respect to samples, proper choice of stress and measuring parameters, data analysis, and limits due to instrumentation.

Keywords

Gate Voltage Drain Current Step Height Gate Bias Drain Voltage 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Notes

Acknowledgment

A part of this work has been supported by the European Commission under the 7th Framework Programme (Collaborative project MORDRED, Contract No. 261868). The author would like to acknowledge the cooperation with all the “MORDRED” partners, the close collaboration with IMEC and Prof. Tibor Grasser’s group, and the help given by the Infineon reliability team, especially Karina Rott and Gunnar Rott.

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Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  1. 1.Infineon Technologies AGNeubibergGermany

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