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Solar-blind UV detectors based on wide band gap semiconductors

  • Udo Schühle
  • Jean-François Hochedez
Chapter
Part of the ISSI Scientific Report Series book series (ISSI, volume 9)

Abstract

Solid-state photon detectors based on wide band gap semiconductors are not yet considered mature technology but their current development opens new possibilities, also for space observations. Such devices are especially attractive for ultraviolet radiation detection, as semiconductor materials with band gaps larger than that of silicon can be produced and used as “visible-blind” or “solar-blind” detectors that are not affected by daylight. Here we evaluate the advantages of such detectors compared to silicon-based devices and report on the semiconductor detectors that have been fabricated in recent years with materials having large band gap energies. We describe the most common pixel designs and characterize their general properties.

Keywords

Boron Nitride Dark Current Minority Carrier Schottky Diode Focal Plane Array 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  • Udo Schühle
    • 1
  • Jean-François Hochedez
    • 2
    • 3
  1. 1.MPS—Max-Planck-Institut für SonnensystemforschungKatlenburg-LindauGermany
  2. 2.ROB—Royal Observatory of BelgiumBrusselsBelgium
  3. 3.LATMOS—Laboratoire Atmosphères, Milieux, Observations SpatialesGuyancourtFrance

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