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POSFET Touch Sensing Devices: Bias Circuit Design Based on the ACM MOS Transistor Compact Model

  • L. Barboni
  • M. Valle
  • R. S. Dahiya
Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 109)

Abstract

In this article we present a common-drain floating gate bias circuit design for POSFET (Piezoelectric Oxide Semiconductor Field Effect Transistor) touch sensing devices. A graphical-aided methodology, intended to furnish a criterion that assures the selection of the most appropriate bias resistance value, is presented

Keywords

Confidence Region Complementary Metal Oxide Semiconductor Readout Circuit Floating Gate Bias Circuit 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgment

This work is supported by the European Commission Project ROBOSKIN (Grant No. ICT-FP7–231500). The research leading to these results has received funding from European Community’s 7th framework “People” specific programme – Marie Curie Actions – under grant agreement PCOFUND–GA–2008–226070.

References

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Copyright information

© Springer Science+Business Media, LLC 2012

Authors and Affiliations

  1. 1.Department of Biophysical and Electronic EngineeringUniversity of GenovaGenovaItaly
  2. 2.Bio-MEMSFondazione Bruno KesslerTrentoItaly

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