POSFET Touch Sensing Devices: Bias Circuit Design Based on the ACM MOS Transistor Compact Model

  • L. Barboni
  • M. Valle
  • R. S. Dahiya
Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 109)


In this article we present a common-drain floating gate bias circuit design for POSFET (Piezoelectric Oxide Semiconductor Field Effect Transistor) touch sensing devices. A graphical-aided methodology, intended to furnish a criterion that assures the selection of the most appropriate bias resistance value, is presented


Confidence Region Complementary Metal Oxide Semiconductor Readout Circuit Floating Gate Bias Circuit 
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This work is supported by the European Commission Project ROBOSKIN (Grant No. ICT-FP7–231500). The research leading to these results has received funding from European Community’s 7th framework “People” specific programme – Marie Curie Actions – under grant agreement PCOFUND–GA–2008–226070.


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Copyright information

© Springer Science+Business Media, LLC 2012

Authors and Affiliations

  1. 1.Department of Biophysical and Electronic EngineeringUniversity of GenovaGenovaItaly
  2. 2.Bio-MEMSFondazione Bruno KesslerTrentoItaly

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