Distributed CMOS Bidirectional Amplifiers pp 95-102 | Cite as
Linearized CMOS Distributed Bidirectional Amplifier Silicon Chip Implementation
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Abstract
This chapter presents several practical layout guidelines of the fully-integrated fully-differential linearized distributed bidirectional amplifier implemented in IBM CMOS RF 0.13µm silicon process. The total chip silicon area is 1.5mm2 including testing pads. The circuit elements forming the linearized CMOS bidirectional distributed amplifier are discussed in terms of their physical arrangement and layout.
Keywords
Metal Layer Layout Design Effective Shield Guard Ring Spiral Inductor
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© Springer Science+Business Media New York 2012