Linearized CMOS Distributed Bidirectional Amplifier Silicon Chip Implementation

  • Ziad El-Khatib
  • Leonard MacEachern
  • Samy A. Mahmoud
Chapter
Part of the Analog Circuits and Signal Processing book series (ACSP)

Abstract

This chapter presents several practical layout guidelines of the fully-integrated fully-differential linearized distributed bidirectional amplifier implemented in IBM CMOS RF 0.13µm silicon process. The total chip silicon area is 1.5mm2 including testing pads. The circuit elements forming the linearized CMOS bidirectional distributed amplifier are discussed in terms of their physical arrangement and layout.

Keywords

Metal Layer Layout Design Effective Shield Guard Ring Spiral Inductor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 2012

Authors and Affiliations

  • Ziad El-Khatib
    • 1
  • Leonard MacEachern
    • 1
  • Samy A. Mahmoud
    • 2
  1. 1.Department of ElectronicsCarleton UniversityOttawaCanada
  2. 2.Department of Systems and Computer EngineeringCarleton UniversityOttawaCanada

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