Silicon MCT

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Abstract

As discussed in Chap. 5, the silicon insulated gate bipolar transistor (IGBT) has been a highly successful innovation that has been widely accepted by the industry for power control applications with supply voltages ranging from 300 to 6,000 V. As shown in that chapter, the optimization of the IGBT structure from an applications standpoint requires reduction of the lifetime in the drift region to enhance its switching speed. This is accompanied by a significant increase in the on-state voltage drop for the IGBT structure. The large on-state voltage drop in the IGBT structure for smaller lifetime values in the drift region can be traced to poor conductivity modulation of the drift region near the emitter. A superior on-state carrier distribution can be obtained by utilizing thyristor-based on-state current flow as shown in Chap. 2. The gate-turn-off thyristor (GTO) was developed to take advantage of the low on-state voltage drop. However, the gate drive current for the GTO is very large as demonstrated in Chap. 4.

Keywords

Anode Voltage Gate Bias Cathode Region Drift Region Insulate Gate Bipolar Transistor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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References

  1. 1.
    V.A.K. Temple, “MOS-Controlled Thyristors”, IEEE Electron Devices Meeting, Abstract 10.7, pp. 282–285, 1984.Google Scholar
  2. 2.
    M. Stoisiek and H. Strack, “MOS GTO – A Turn-off Thyristor with MOS-Controlled Emitter Shorts”, IEEE Electron Devices Meeting, Abstract 6.5, pp. 158–161, 1985.Google Scholar
  3. 3.
    V.A.K. Temple and W. Tantraporn, “Effect of Temperature and Load on MCT Turn-off Capability”, IEEE Electron Devices Meeting, Abstract 5.5, pp. 86–121, 1985.Google Scholar
  4. 4.
    M. Stoisiek, et al, “A Large Area MOS-GTO with Wafer-Repair Technique”, IEEE Electron Devices Meeting, Abstract 29.3, pp. 666–669, 1987.Google Scholar
  5. 5.
    V.A.K. Temple, S. Arthur, and D.L. Watrous, “MCT (MOS Controlled Thyristor) Reliability Investigation”, IEEE Electron Devices Meeting, Abstract 27.4, pp. 618–621, 1988.Google Scholar
  6. 6.
    F. Bauer, et al, “Design Aspects of MOS Controlled Thyristor Elements”, IEEE Electron Devices Meeting, Abstract 11.6.1, pp. 297–300, 1989.Google Scholar
  7. 7.
    A. Aemmer, et al, “Multi-Dimensional Simulation of MCT Structures”, IEEE International Symposium on Power Semiconductor Devices and ICs, Abstract 2.1, pp. 20–25, 1990.Google Scholar
  8. 8.
    H. Lendenmann, et al, “Switching Behavior and Current Handling Performance of MCT-IGBT Cell Ensembles”, IEEE Electron Devices Meeting, Abstract 6.3.1, pp. 149–152, 1991.Google Scholar
  9. 9.
    F. Bauer, et al, “Static and Dynamic Characteristics of High Voltage (3.5 kV) IGT and MCT Devices”, IEEE International Symposium on Power Semiconductor Devices and ICs, Abstract 2.1, pp. 22–27, 1992.Google Scholar
  10. 10.
    H. Lendenmann, et al, “Approaching Homogeneous Switching of MCT Devices: Experiment and Simulation”, IEEE International Symposium on Power Semiconductor Devices and ICs, Abstract 3.3, pp. 66–70, 1993.Google Scholar
  11. 11.
    H. Dettmer, et al, “A Comparison of the Switching Behavior of IGBT and MCT Power Devices”, IEEE International Symposium on Power Semiconductor Devices and ICs, Abstract 3.1, pp. 54–59, 1993.Google Scholar
  12. 12.
    H. Dettmer, et al, “4.5 kV MCT with Buffer Layer and Anode Short Structure”, IEEE International Symposium on Power Semiconductor Devices and ICs, Abstract 1.3, pp. 13–17, 1994.Google Scholar
  13. 13.
    B.J. Baliga and M. Smith, “Modulated Conductivity Devices reduce Switching Losses”, Electronic Design Magazine, Vol. 28, pp. 153–162, 1983.Google Scholar
  14. 14.
    N. Mohan, T.M. Undeland, and W.P. Robbins, “Power Electronics”, John Wiley and Sons, Inc., New York, 1995.Google Scholar
  15. 15.
    F. Bauer, et al, “On the Suitability of BiMOS High Power Devices in Intelligent Snubberless Power Conditioning Circuits”, IEEE International Symposium on Power Semiconductor Devices and ICs, Abstract 5.3, pp.201–206, 1994.Google Scholar
  16. 16.
    H. Lendenmann and W. Fichtner, “Turn-off Failure Mechanisms in Large (2.2 kV, 20A) MCT Devices”, IEEE International Symposium on Power Semiconductor Devices and ICs, Abstract 5.4, pp.207–212, 1994.Google Scholar
  17. 17.
    B.J. Baliga, “Fundamentals of Power Semiconductor Devices”, Springer-Science, New York, 2008.CrossRefGoogle Scholar

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© Springer Science+Business Media, LLC 2011

Authors and Affiliations

  1. 1.Department of Electrical and Computer EngineeringNorth Carolina State UniversityRaleighUSA

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