The Physics and Technology of Amorphous SiO2 pp 553-559 | Cite as
Interface Properties and Recombination Mechanisms in Simox Structures
Chapter
Abstract
In this paper, we present new methods and results related to the characterization of silicon on insulator material fabricated by deep oxygen implantation (SIMOX). The minority carrier lifetime as well as the surface recombination velocity are obtained using depletion-mode MOSFETs. This is done by monitoring the drain current while the gate is being pulsed into deep depletion.
Keywords
Drain Current Interface Trap Minority Carrier Lifetime Surface Recombination Velocity Gate Area
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Copyright information
© Plenum Press, New York 1988