Fundamentals Of Dendritic Growth

  • M. E. Glicksman
Chapter
Part of the NATO ASI Series book series (NSSB, volume 210)

Abstract

Dendritic growth is perhaps the most common form of solidification especially in metals and other systems that freeze with relatively low entropies of transformation. Dendritic or branched growth in alloys generates microsegregation as well as other internal defects in castings, ingots, and weldments. More subtle effects introduced by the complex dendritic microstructure in solidified materials include crystallographic texturing, hot cracking, suboptimal toughness, and reduced corrosion resistance. Moreover, the dendritic microstructure and its effects may be modified by subsequent heat treatments, but they are seldom fully “erased”. As such, the understanding and control of dendritic growth in solidification processing is crucial in order to achieve specific material properties in final products.

Keywords

Peclet Number Critical Radius Rensselaer Polytechnic Institute Shape Preserve Pivalic Acid 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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References

  1. 1.
    J. C. Fisher, as referenced by Bruce Chalmers, “Principles of Solidification”, p. 105, John Wiley and Sons, New York (1964).Google Scholar
  2. 2.
    G. P. Ivantsov, Dokl. Akad. Nauk SSR., 58:567 (1947).Google Scholar
  3. 3.
    G. Horvay and J. W. Cahn, Acta Met., 9:695 (1961).CrossRefGoogle Scholar
  4. 4.
    G. F. Boiling and W. A. Tiller, J. Appl. Phys., 32:2587 (1961).CrossRefGoogle Scholar
  5. 5.
    R. F. Sekerka, R. G. Seidensticker, D. R. Hamilton and J. D. Harrison, Investigation of Desalination by Freezing, Westinghouse Res. Lab. Rep., Ch. 3 (1967).Google Scholar
  6. 6.
    M. E. Glicksman and R. J. Schaefer, J. Crystal Growth, 1:297 (1967).CrossRefGoogle Scholar
  7. 7.
    M. E. Glicksman and R. J. Schaefer, J. Crystal Growth, 2:239 (1968).CrossRefGoogle Scholar
  8. 8.
    D. E. Temkin, Dokl. Akad. Nauk SSR., 132:1307 (1960).Google Scholar
  9. 9.
    R. Trevedi, Acta Met., 18:287 (1970).CrossRefGoogle Scholar
  10. 10.
    G. E. Nash and M. E. Glicksman, Acta Met., 22:1283 (1974).CrossRefGoogle Scholar
  11. 11.
    M. E. Glicksman, R. J. Schaefer and J. D. Ayers, Met. Trans., A7:1747 (1976).Google Scholar
  12. 12.
    R. J. Schaefer, M. E. Glicksman and J. D. Ayers, Phil. Mag., 32:725 (1975).CrossRefGoogle Scholar
  13. 13.
    C. Zener, Trans. AIME, 167:550 (1964).Google Scholar
  14. 14.
    I. Jin and G. R. Purdy, J. Crystal Growth, 23:25 (1974).CrossRefGoogle Scholar
  15. 15.
    T. Fujioka, PhD Thesis, Carnegie-Mellon University (1978).Google Scholar
  16. 16.
    S. C. Hardy, Phil. Mag., 35:471 (1977).CrossRefGoogle Scholar
  17. 17.
    G. R. Kotier and W. A. Tiller, J. Crystal Growth, 2:287 (1968).CrossRefGoogle Scholar
  18. 18.
    R. Trivedi and W. A. Tiller, Acta Met., 26:67 (1979).Google Scholar
  19. 19.
    W. Oldfield, Mat. Sci. Engr., 11:211 (1973).CrossRefGoogle Scholar
  20. 20.
    R. D. Doherty, B. Cantor and S. Fairs, Met. Trans., A9:621 (1978).Google Scholar
  21. 21.
    W. W. Mullins and R. F. Sekerka, J. Appl. Phys., 34:323 (1963).CrossRefGoogle Scholar
  22. 22.
    J. S. Langer and H. Muller-Krumbhaar, Acta Met., 26:1681;1689;1697 (1978).Google Scholar
  23. 23.
    V. V. Voronkov, Sov. Phys. Solid St., 6:2378 (1964).Google Scholar
  24. 24.
    S. C. Huang and M. E. Glicksman, Acta Met., 29:701 (1981).CrossRefGoogle Scholar
  25. 25.
    S. R. Coriell and R. L. Parker, J. Appl. Phys., 36:632 (1965).CrossRefGoogle Scholar
  26. 26.
    S. R. Coriell and R. L. Parker, Proc. ICCG, Boston, Mass., 1966, Suppl. to J. Phys. Chem. SolidsGoogle Scholar
  27. H. Steffen Peiser, ed., J-3:703 (1967).Google Scholar
  28. 27.
    R. Trivedi, H. Franke and R. Lacmann, J. Crystal Growth, 47:389 (1979).CrossRefGoogle Scholar
  29. 28.
    Narsingh Bahadur Singh, private communication.Google Scholar
  30. 29.
    M. E. Glicksman and S. C. Huang, Adv. Space Res., 1:25 (1981).CrossRefGoogle Scholar
  31. 30.
    U. Lappe, KFA Report, Kernforschungsanlage Jülich, FRG (1980).Google Scholar
  32. 31.
    S. C. Huang, PhD Thesis, Rensselaer Polytechnic Institute (1979).Google Scholar
  33. 32.
    J. S. Langer and H. Müller-Krumbhaar, J. Crystal Growth, 42:11 (1977).CrossRefGoogle Scholar
  34. 33.
    J. S. Langer, Rve. Mod. Phys., 52, No. 1:1 (1980).CrossRefGoogle Scholar
  35. 34.
    M. H. Burden and J. D. Hunt, J. Crystal Growth, 22:99 (1974).CrossRefGoogle Scholar
  36. 35.
    S. Witzke, J. P. Riquet and F. Durand, Acta Met., 29:365 (1981).CrossRefGoogle Scholar
  37. 36.
    Hasse Fredricksson, in: “Materials Processing in the Reduced Gravity Environment of Space”Google Scholar
  38. G. E. Rindone, ed., p. 619, Elsevier, Amsterdam (1982).Google Scholar
  39. 37.
    R. Trivedi and W. A. Tiller, Acta Met., 26:679 (1978).CrossRefGoogle Scholar
  40. 38.
    J.S. Langer, Phys. Chem. Hydrodyn., 1:41 (1980).Google Scholar
  41. 39.
    C. Lindenmeyer, PhD Thesis, Harvard University (1959).Google Scholar
  42. 40.
    M.E. Glicksman, Narsingh Bahadur Singh and M. Chopra, in: “Materials Processing in the Reduced Gravity Environment of Space”Google Scholar
  43. G. E. Rindone, ed., p. 461, Elsevier, Amsterdam (1982).Google Scholar
  44. 41.
    W. Kurz, J. Lipton and M. E. Glicksman, unpublished work (1983).Google Scholar
  45. 42.
    M. Chopra, PhD Thesis, Rensselaer Polytechnic Institute (1983).Google Scholar
  46. 43.
    J. Lipton, M. E. Glicksman and W. Kurz, Mater. Sci. Eng., 65:57–63 (1984).CrossRefGoogle Scholar
  47. 44.
    W. Kurz and D. J. Fisher, Acta Met., 29:11–20 (1981).CrossRefGoogle Scholar
  48. 45.
    J. Lipton, M. E. Glicksman and W. Kurz, Met. Trans., 18A:341–345 (1987).Google Scholar

Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • M. E. Glicksman
    • 1
  1. 1.Materials Engineering DepartmentRensselaer Polytechnic InstituteTroyUSA

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