High Resolution Electron Microscopy Study of Indium Distribution in InAs/GaAs Multilayers
Abstract
Two InAs/GaAs multilayers have been studied using X-Ray diffraction (XR), photoluminescence (PL) and high Resolution Transmission Electron Microscopy (HRTEM) in order to determine the Indium location. X-Ray diffraction has provided the thickness and periodicity of the multilayers. The ones chosen were respectively A : 0.9 monolayer (mL) and B : 1.7 mL thick according to XR measurements. From comparison of their structure we conclude that Indium intermixes with Gallium and gives rise to a thicker film, InGaAs, the Indium proportion being at least 50 %. The interface InAs/GaAs is atomically flat, whereas the interface GaAs/InAs is extremely rough. This may be a way of decreasing the elastic energy.
Keywords
High Resolution Transmission Electron Microscopy Molecular Beam Epitaxy High Resolution Transmission Electron Microscopy GaAs Layer Interface RoughnessPreview
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References
- 1-.N.K WAGNER, Thin Solid Films 38 (1976) 353.CrossRefGoogle Scholar
- 2-.H.A WASHBURN, J.R. SITES, H.H. WIEDER, J. Appl. Phys. 50 (1979) 4872.CrossRefGoogle Scholar
- 3-.T. FUKUI, H. SAITO, Jap. J. of Appl. Phys. 24 (1985) L774.CrossRefGoogle Scholar
- 4-.J.D. GRANGE, E.H.C. PARKER and R. M. KING J. Phys. D12 (1979) 1601.Google Scholar
- 5-.A.C. GOSSARD, Thin solid Films 57 (1979) 3.CrossRefGoogle Scholar
- 6-.C.A. CHANG, C.M. SERRANO, L.L. CHANG, and L. ESAKI, Appl. Phys. Letters 37 (1980) 538.CrossRefGoogle Scholar
- 7-.R.S. WILLIAMS, B.M. PAINE, W.J. SCHAFFER and S.P. KOWALCZYCK, J. Vacuum Sci. Technol. 21 (1982) 386.CrossRefGoogle Scholar
- 8-.M. QUILLEC, L. GOLDSTEIN, G. LE ROUX, J. BURGEAT and J. PRIMOT, Appl. Phys. Letters 55 (1984) 2904.Google Scholar
- 9-.F.J. GRUNTHANER, H.Y. YEN, M.A. MADHUKAR, R. FERNANDEZ and J. MASERJIAN Appl PHYS. Letters 46 (1985) 983.CrossRefGoogle Scholar
- 10-.C. D’ANTERROCHES, J.Y. MARZIN, G. LE ROUX and L. GOLDSTEIN J. of Crystal Growth 81 (1987) 121.CrossRefGoogle Scholar
- 11-.C. GUILLE, F. HOUZAY, J.M. MOISON and F. BARTHE surf. Sci. 189 (1987) 1041.CrossRefGoogle Scholar
- 12-.Y. HOROKOSHI, M. KAWASHIMA and M. YAMAGUCHI, Japan J. Appl. Phys. 25 (1986) L868.CrossRefGoogle Scholar
- 13-.J.M. GERARD, and J.Y. MARZIN Appl. Phys. Lett. 53 (1988) 568.CrossRefGoogle Scholar
- 14-.J.M. GERARD unpublished.Google Scholar
- 15-.L. GOLDSTEIN, F. GLAS, J.Y. MARZIN, M.N. CHARASSE and G. LE ROUX. Appl. Phys. Lett. 47 (1985) 1099.CrossRefGoogle Scholar