Observations on the Growth of YBa2Cu307-δ Thin Films by Transmission Electron Microscopy

  • M. Grant Norton
  • C. Barry Carter
Chapter

Abstract

A major research effort in high-temperature oxide superconductors is the growth of high-quality thin films. The physical properties of polycrystalline thin films are controlled by their microstructure which is influenced by the early stages of film growth and the establishment of epitaxy. In this article, the nucleation and heteroepitactic growth of YBa2Cu3O7-δ thin films is reviewed. In particular, the role of transmission electron microscopy in these studies is highlighted.

Keywords

Film Growth Misfit Dislocation Rutherford Backscatter Spectrometry Lattice Misfit Tilt Boundary 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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References

  1. J.G. Bednorz and K.A. Muller, Z. Phys. B 64, 189 (1986).Google Scholar
  2. M.K. Wu, J.R. Ashburn, C.J. Torng, P.H. Hor, R.L. Meng, L. Gao, Z.J. Huang, Y.Q. Wang, and C.W. Chu, Phys. Rev. Lett. 58, 908 (1987).ADSCrossRefGoogle Scholar
  3. Y. Bando, T. Terashima, K. Iijima, K. Yamamoto, K. Hirata, K. Hayashi, K. Kamigaki, and H. Terauchi, Proc. XII Intl. Cong, for Electron Microsc. (1990)Google Scholar
  4. J.Q. Zheng, X.K. Wang, M.C. Shih, S.J. Lee, S. Williams, J. So, P. Dutta, J.B. Ketterson, and R.P.H. Chang, Proc. 2nd. Intl. Conf. on Electronic Mater. 85(1990)Google Scholar
  5. M.G. Norton and C.B. Carter, J. Cryst. Growth 110, 645 (1991)ADSCrossRefGoogle Scholar
  6. S.K. Streiffer, B.M. Lairson, C.B. Eom, B.M. Clemens, T.H. Geballe, and J.C. Bravman, Phys. Rev. B 43, 13007 (1991)ADSCrossRefGoogle Scholar
  7. J. Geerk, G. Linker, and O. Meyer, Mater. Sci. Rep. 4, 193 (1989)CrossRefGoogle Scholar
  8. M. Hawley, I.D. Raistrick, J.G. Beery, and R.J. Houlton, Science 251, 1587 (1991)ADSCrossRefGoogle Scholar
  9. C. Gerber, D. Anselmetti, J.G. Bednorz, J. Mannhart, and D.G. Schlom, Nature 350, 279(1991)Google Scholar
  10. H. Poppa, in Epitaxial Growth Part A, edited by J.W. Matthews ( Academic Press, New York, 1975 ), p. 215.Google Scholar
  11. K.J. Morrissey and C.B. Carter, Mater. Res. Soc. Symp. Proc. 41, 137 (1985)Google Scholar
  12. L.A. Tietz, S.R. Summerfelt, G.R. English, and C.B. Carter, Appl. Phys. Lett. 55, 1202 (1989)ADSCrossRefGoogle Scholar
  13. M.G. Norton, L.A. Tietz, S.R. Summerfelt, and C.B. Carter, Appl. Phys. Lett. 55, 2348 (1989)ADSCrossRefGoogle Scholar
  14. M.G. Norton and C.B. Carter, J. Mater. Res. 5, 2762 (1990)ADSCrossRefGoogle Scholar
  15. D.W. Susnitzky and C.B. Carter, Proe. 45th Annual Meeting of the Electron Microscopy Society of America, 1987, p. 154.Google Scholar
  16. Y.K. Simpson and C.B. Carter, Philos. Mag. Lett.53, L1 (1986)ADSGoogle Scholar
  17. M.G. Norton, E.L. Fleischer, W. Hertl, C.B. Carter, J.W. Mayer, and E. Johnson, Phys. Rev. B 43, 9291 (1991)Google Scholar
  18. The Oxford English Dictionary, 2nd. ed., prepared by J.A. Simpson and E.S.C. Weiner (Clarendon Press, Oxford, Oxford University Press, New York, 1989)Google Scholar
  19. S.W. Bailey, V.A. Frank-Kamenetskii, S. Goldsztaub, A. Kato, A. Pabst, H. Schultz, H.F.W. Taylor, M. Fleischer, and A.J.C. Wilson, Acta. Crystallogr. A33, 681 (1977)CrossRefGoogle Scholar
  20. M.L. Frankhenheim, Ann. Phys. 37, 516 (1836)Google Scholar
  21. H. Siefert, in Structure and Properties of Solid Surfaces, edited by R. Gomer and C.R. Smith ( University of Chicago Press, Chicago, 1953 ), p. 218.Google Scholar
  22. L. Royer, Bull. Soc. Franc. Mineral 51, 7 (1928)Google Scholar
  23. L.G. Schultz, Acta. Crystallogr. 4, 483 (1951)CrossRefGoogle Scholar
  24. Epitaxial Growth Part B, edited by J.W. Matthews (Academic Press, New York, 1975)Google Scholar
  25. M.H. Grabow and G.H. Gilmer, Surf. Sci. 194, 333 (1988)ADSCrossRefGoogle Scholar
  26. M.J. Stowell, in Epitaxial Growth Part B, edited by J.W. Matthews (Academic Press, New York, 1975 )Google Scholar
  27. A. Inam, M.S. Hegde, X.D. Wu, T. Venkatesan, P. England, P.F. Miceli, E.W. Chase, C.C. Chang, J.M. Tarascon, and J.B. Wachtman, Appl. Phys. Lett. 53, 908 (1988)ADSCrossRefGoogle Scholar
  28. D.K. Lathrop, B.H. Moeckly, S.E. Russek, and R.A. Buhrman, Appl. Phys. Lett. 58, 1095(1991)Google Scholar
  29. R.W. Simon, J.F. Burch, K.P. Daly, W.D. Dozier, R. Hu, A.E. Lee, J.A. Luine, H.M. Manasevit, C.E. Piatt, S.M. Schwarzbek, D. St.John, M.S. Wire, and M.J. Zani, in Science and Technology of Thin Film Superconductors 2, edited by R.D. McConnell and R. Noufi ( Plenum Press, New York, 1990 ), p. 549.Google Scholar
  30. M. Naito, R.H. Hammond, B. Oh, M.R. Hahn, J.W.P. Hsu, P. Rosenthal, A.F. Marshall, M.R. Beasley, T.H. Geballe, and A. Kapitulnik, J. Mater. Res. 2, 713 (1987)Google Scholar
  31. X.X. Xi, G. Linker, O. Meyer, E. Nold, B. Obst, F. Ratzel, R. Smithey, B. Strehlau, F. Weschenfelder, and J. Geerk, Z. Phys. B 74, 13 (1989)Google Scholar
  32. P.H. Dickinson, T.H. Geballe, A. Sanjurjo, D. Hidenbrand, G. Craig, M. Zisk, J. Collman, S.A. Banning, and R.E. Sievers, J. Appl. Phys. 66, 444 (1989)ADSCrossRefGoogle Scholar
  33. D. Dijkkamp, T. Venkatesan, X.D. Wu, S.A. Shaheen, N. Jisrawi, Y.H. MinLee, W.L. Mclean, and M. Croft, Appl. Phys. Lett. 51, 619 (1987)ADSCrossRefGoogle Scholar
  34. S.E. Russek, B.H. Moeckly, R.A. Buhrman, J.T. McWhirter, A.J. Sievers, M.G. Norton, L.A. Tietz, and C.B. Carter, in High Temperature Superconductors: Fundamental Properties and Novel Materials Processing, edited by J. Narayan, C.W. Chu, L.F. Schneemeyer, and D.K. Christen, Mater. Res. Soc. Symp. Proc. 169,455 (1990)Google Scholar
  35. G. Koren, A. Gupta, E.A Giess, A. Sergmuller, and R.B. Laibowitz, Appl. Phys. Lett. 54, 1054 (1989)ADSCrossRefGoogle Scholar
  36. R.W. Simon, C.E. Piatt, A.E. Lee, G.S. Lee, K.P. Daly, M.S. Wire, J.A. Luine, and M. Urbanik, Appl. Phys. Lett. 53, 2677 (1988)ADSCrossRefGoogle Scholar
  37. B.H. Moeckly, S.E. Russek, D.K. Lathrop, R.A. Buhrman, M.G. Norton, and C.B. Carter, Appl. Phys. Lett. 57, 2951 (1990)ADSCrossRefGoogle Scholar
  38. D.P. Norton, D.H. Lowndes, J.D. Budai, D.K. Christen, E.G. Jones, K.W. Lay, and J.E. Tkaczyk, Appl. Phys. Lett. 57, 1164 (1990)ADSCrossRefGoogle Scholar
  39. 39.
    X.X. Xi, J. Geerk, G. Linker, Q. Li, and O. Meyer, Appl. Phys. Lett. 54, 310 (1989)CrossRefGoogle Scholar
  40. S.E. Russek, D.K. Lathrop, B.H. Moeckly, R.A. Buhrman, D.H. Shin, and J. Silcox, Appl. Phys. Lett. 57, 155 (1990)CrossRefGoogle Scholar
  41. D. Dimos, P. Chaudari, J. Mannhart, and F.K. LeGoues, Phys. Rev. Lett. 61, 219 (1988)ADSCrossRefGoogle Scholar
  42. G.A. Bassett, Proc. European Regional Conference on Electron Microscopy, Delft, 1, 270 (1960)Google Scholar
  43. D.W. Pashley, M.J. Stowell, M.H. Jacobs, and T.J. Law, Philos. Mag. 10, 127 (1964)ADSCrossRefGoogle Scholar
  44. G. Honjo and K. Yagi, in Current Topics in Materials Science, edited by Kaldis (North-Holland Publishing Company, Amsterdam, 1980), Vol. 6, p. 195Google Scholar
  45. M. Sarikaya, B.L. Thiel, I.A. Aksay, W.J. Weber, and W.S. Frydrych, J. Mater. Res. 2, 736 (1987)ADSCrossRefGoogle Scholar
  46. M.G. Norton, S.R. Summerfelt, and C.B. Carter, Appl. Phys. Lett. 56, 2246 (1990)ADSCrossRefGoogle Scholar
  47. M.G. Norton, S. McKernan, and C.B. Carter, in Materials Reliability Issues in Microelectronics, Mater. Res. Soc. Symp. Proc. 225, 349 (1991)Google Scholar
  48. M.G. Norton, L.A. Tietz, S.R. Summerfelt, and C.B. Carter, in High Temperature Superconductors: Fundamental Properties and Novel Materials Processing, edited by J. Narayan, C.W. Chu, L.F. Schneemeyer, and D.K. Christen, Mater. Res. Soc. Symp. Proc. 169, 509 (1990).Google Scholar
  49. B.H. Moeckly, S.E. Russek, D.K. Lathrop, R.A. Buhrman, J. Li, and J.W. Mayer, Appl. Phys. Lett. 57, 1687 (1990)ADSCrossRefGoogle Scholar
  50. B.H. Moeckly, D.K. Lathrop, S.E. Russek, R.A. Buhrman, M.G. Norton, and C.B. Carter, IEEE Trans. Magn. 27, 1017 (1991)ADSCrossRefGoogle Scholar
  51. O. Meyer, J. Geerk, Q. Li, G. Linker, and X.X. Xi, Nucl. Instrum. Methods Phys. Res. B 45, 483 (1990)ADSCrossRefGoogle Scholar
  52. O. Meyer, F. Weschenfelder, X.X. Xi, G.C. Xiong, G. Linker, and J. Geerk, Nucl. Instrum. Methods Phys. Res. B 35, 292 (1988)ADSCrossRefGoogle Scholar
  53. L.A. Tietz, C.B. Carter, D.K. Lathrop, S.E. Russek, and R.A. Buhrman, in High Temperature Superconductors, edited by M.B. Brodsky, R.C. Dynes, K. Kitazawa, and H.L. Tuller, Mater. Res. Soc. Symp. Proc99, 715 (1988)Google Scholar
  54. P.W. Tasker and D.M. Duffy, Surf. Sci.137, 91 (1984)ADSCrossRefGoogle Scholar
  55. R.B. Poeppel and J.M. Blakely, Surf. Sci. 15, 507 (1969)ADSCrossRefGoogle Scholar
  56. The American Heritage Dictionary, 2nd College Edition (Houghton Mifflin, Boston, 1985)Google Scholar
  57. S.K. Streiffer, B.M. Lairson, and J.C. Bravman, Appl. Phys. Lett. 57, 2501 (1990)ADSCrossRefGoogle Scholar
  58. C.B. Carter and H. Schmalzried, Philos. Mag. A 52, 207 (1985)ADSCrossRefGoogle Scholar
  59. R. Du and C.P. Flynn, J. Phys. Condensed Matter 2, 1335 (1990)ADSCrossRefGoogle Scholar
  60. T.E. Mitchell, S. Basu, M.A. Nastasi, and T. Roy, in High Resolution Electron Microscopy of Defects in Materials, edited by R. Sinclair, U. Dahmen, and D.J. Smith, Mater. Res. Soc. Symp. Proc. 183, 357 (1990)Google Scholar
  61. R. Ramesh, D. Hwang, T.S. Ravi, A. Inam, J.B. Barner, L. Nazar, S.-W. Chan, C.Y. Chen, B. Dutta, T. Venkatesan, and X.D. Wu, Appl. Phys. Lett. 56, 2243 (1990)ADSCrossRefGoogle Scholar
  62. L.A. Tietz, C.B. Carter, D.K. Lathrop, S.E. Russek, R.A. Buhrman, and J.R. Michael, J. Mater. Res. 4, 1072 (1989)ADSCrossRefGoogle Scholar
  63. M.G. Norton, B.H. Moeckly, C.B. Carter, and R.A. Buhrman, J. Cryst. Growth 114, 258(1991)Google Scholar
  64. M.G. Norton and C.B. Carter, in Laser Ablation for Materials Synthesis, edited by D.C. Paine and J.C. Bravman, Mater. Res. Soc. Symp. Proc. 191, 165 (1990)Google Scholar
  65. X.X. Xi, J. Geerk, G. Linker, Q. Li, and O. Meyer, Appl. Phys. Lett. 54, 2367 (1989)ADSCrossRefGoogle Scholar
  66. M.G. Norton, S. McKernan, and C.B. Carter, Philos. Mag. Lett. 62, 77 (1990)ADSCrossRefGoogle Scholar
  67. M.G. Norton and C.B. Carter, Physica C 172, 47 (1990)ADSCrossRefGoogle Scholar
  68. P.B. Hirsch, A. Howie, R. Nicholson, D.W. Pashley, and M.J. Whelan, Electron Microscopy of Thin Crystals( Krieger, Malabar, FL, 1975 ), pp. 353 – 387Google Scholar
  69. D.W. Pashley, in Thin-Films(Amer. Soc. Metals, Metals Park, OH, 1964 ), p. 59Google Scholar
  70. G.A. Bassett, J.W. Menter, and D.W. Pashley, Proc. R. Soc. London A 246, 345 (1958)ADSCrossRefGoogle Scholar
  71. J. W. Menter, Adv. Phys. 7, 300 (1958)ADSCrossRefGoogle Scholar
  72. J.W. Matthews, Surf. Sci. 31, 241 (1972)ADSCrossRefGoogle Scholar
  73. S. McKernan, M.G. Norton, and C.B. Carter, J. Mater. Res. 7, 1052 (1992)ADSCrossRefGoogle Scholar
  74. M.G. Norton and C.B. Carter, Physica C 182, 30 (1991)ADSCrossRefGoogle Scholar
  75. M.G. Norton and C.B. Carter, Scanning Microscopy 6, 385 (1992)Google Scholar
  76. F.R.N. Nabarro, Theory of Crystal Dislocations( Dover, New York, 1987 ), p. 303.Google Scholar
  77. R. Ramesh, D.M. Hwang, J.B. Barner, L. Nazar, T.S. Ravi, A. Inam, B. Dutta, X.D. Wu, and T. Venkatesan, J. Mater. Res. 5, 704 (1990)ADSCrossRefGoogle Scholar
  78. R. Ramesh, D.M. Hwang, T. Venkatesan, T.S. Ravi, L. Nazar, A. Inam, X.D. Wu, B. Dutta, G. Thomas, A.F. Marshall, and T.H. Geballe, Science 247, 57 (1989)ADSCrossRefGoogle Scholar
  79. Y. Zhu, M. Suenaga, and Y. Xu, Philos. Mag. Lett. 60, 51 (1989)ADSCrossRefGoogle Scholar

Copyright information

© Springer-Verlag New York,Inc. 1994

Authors and Affiliations

  • M. Grant Norton
    • 1
  • C. Barry Carter
    • 1
  1. 1.Department of Materials Science and EngineeringCornell UniversityIthachaUSA

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