FinFET SRAM Design

Chapter

Abstract

We present a comprehensive review of finFET devices taking into consideration different levels of interest ranging from the physics of FinFET devices, design considertaions, and applications to memory design and statistics.

We start with fundamental equations that describe the advantages of finFETs in terms of leakage reduction and ON current improvement compared to planar devices. Following this, we look at variability aspects of finFETs such as quantization (L, W, Vt) from a memory design perspective. We then lay the foundation for SRAM yield optimization in terms of cell dynamic behaviour and study different cell designs that leverage the finFET device structure. We also apply statistical methodology to evaluate the finFET variability.

Keywords

FinFET SRAM Statistical Leakage double gate backgate MOSFET 

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Copyright information

© Springer Science+Business Media, LLC 2011

Authors and Affiliations

  1. 1.IBMThomas J. Watson Research CenterYorktown HeightsUSA

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