Diffusion is a frequently used technique to incorporate impurities into a semiconductor. Imperfection in a nearly perfect crystal is the prime theme of intentional impurity diffusion in silicon crystals [1] for the formation of p-n junctions, conduction channels, and source drain regions. The performance of the devices depends critically on the impuri-ty concentration and the impurity profile. For this reason the diffusion of various impurities in semiconductors has been studied extensively.
Keywords
Barrier Layer Dielectric Layer Grain Boundary Atomic Layer Deposition Ternary Phase Diagram
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