Epitaxial (001) Ge on Crystalline Oxide Grown on (001) Si
Fully epitaxial germanium-on-insulator structures have been grown for the first time on (001) Si substrates by using a perovskite oxide template. Detailed transmission electron microscopy analysis revealed that a two-temperature growth procedure is required in order to avoid three-dimensional island growth and to obtain continuous and flat Ge films. The interface between the oxide and Ge is fully crystalline and atomically sharp. A high density of stacking faults and twin structures has been found preferentially originating from the surface roughness of the oxide.
KeywordsMolecular Beam Epitaxy Misfit Dislocation SiGe Layer Twin Structure Molecular Beam Epitaxy System
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