Microscopy of Semiconducting Materials 2007 pp 119-122

Part of the Springer Proceedings in Physics book series (SPPHY, volume 120)

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Epitaxial (001) Ge on Crystalline Oxide Grown on (001) Si

  • Ch Dieker
  • J W Seo
  • A Guiller
  • M Sousa
  • J-P Locquet
  • J Fompeyrine
  • Y Panayiotatos
  • A Sotiropoulos
  • K Argyropoulos
  • A Dimoulas

Summary

Fully epitaxial germanium-on-insulator structures have been grown for the first time on (001) Si substrates by using a perovskite oxide template. Detailed transmission electron microscopy analysis revealed that a two-temperature growth procedure is required in order to avoid three-dimensional island growth and to obtain continuous and flat Ge films. The interface between the oxide and Ge is fully crystalline and atomically sharp. A high density of stacking faults and twin structures has been found preferentially originating from the surface roughness of the oxide.

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References

  1. 1.
    Tracy C J, Fejes P, Theodore N D, Maniar P, Johnson E, Lamm A J, Paler A M, Malik I J and Ong P 2004 J. Electr. Mater. 33, 886CrossRefADSGoogle Scholar
  2. 2.
    Nakaharai S, Tezuka T, Sugiyama, Mariyama Y and Takagi S 2003 Appl. Phys. Lett. 83, 3516CrossRefADSGoogle Scholar
  3. 3.
    Liu Y, Deal M D and Plummer J D 2004 Appl. Phys. Lett. 84, 2563CrossRefADSGoogle Scholar
  4. 4.
    Hoegen M, Copel M, Tsang J C, Reuter M C and Tromp R M 1994 Phys. Rev. B 50, 10811CrossRefADSGoogle Scholar
  5. 5.
    Eaglesham D J, Unterwald F C and Jacobson D C 1993 Phys. Rev. Lett. 70, 966PubMedCrossRefADSGoogle Scholar
  6. 6.
    Bojarczuk N A, Copel M, Guha S, Narayanan V, Preisler E J, Ross F M and Shang H 2005 Appl. Phys. Lett. 83, 5443CrossRefADSGoogle Scholar
  7. 7.
    Preisler E J, Guha S, Perkins B R, Kazazis D and Zaslavsky A 2005 Appl. Phys. Lett. 86, 223504CrossRefADSGoogle Scholar
  8. 8.
    Norga G, Marchiori C, Guiller A, Locquet J P, Siegwart H, Rossel H, Caimi D, Fompeyrine J and Conard T 2005 Appl. Phys. Lett. 87, 262905CrossRefADSGoogle Scholar
  9. 9.
    Marchiori Ch, Sousa M, Guiller A, Siegwart H, Locquet J -P, Fompeyrine J, Norga G and Seo J W 2005 Appl. Phys. Lett. 88, 072913CrossRefADSGoogle Scholar

Copyright information

© Springer Science+Business Media B.V. 2008

Authors and Affiliations

  • Ch Dieker
    • 1
  • J W Seo
    • 1
  • A Guiller
    • 2
  • M Sousa
    • 2
  • J-P Locquet
    • 2
  • J Fompeyrine
    • 2
  • Y Panayiotatos
    • 3
  • A Sotiropoulos
    • 3
  • K Argyropoulos
    • 3
  • A Dimoulas
    • 3
  1. 1.Institute of Physics of Complex MatterEcole Polytechnique Fédérale de LausanneLausanneSwitzerland
  2. 2.Zurich Research LaboratoryIBM Research GmbHRüschlikonSwitzerland
  3. 3.National Center for Scientific Research DemokritosAthensGreece

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