Classification of the Destruction Effects in CMOS-Devices after Impact of Fast Transient Electromagnetic Pulses

Abstract

In this investigation the destruction effects in CMOS-devices after impact of fast transient electromagnetic pulses have been classified. In comparison with TTL-devices, identical CMOS-devices are much more complex concerning the layout. Anyway, the destruction effects are similar to the destruction effects observed at TTL-devices in previous investigations (Ref. 1). In this paper a classification concerning the location areas have been performed. It will be shown that first, at lower field amplitudes, the input protection circuits of the tested CMOS-devices are damaged. If the amplitude increases additional destructions of the output circuits appear. Further increase leads to destructions directly inside the electronic circuit (between input and output circuits).