ZnCdSe Quantum Structures — Growth, Optical Properties and Applications

  • Martin Strassburg
  • O. Schulz
  • Matthias Strassburg
  • U. W. Pohl
  • R. Heitz
  • A. Hoffmann
  • D. Bimberg
  • M. Klude
  • D. Hommel
  • K. Lischka
  • D. Schikora
Chapter
First Online:
Part of the Advances in Solid State Physics book series (ASSP, volume 42)

Abstract

ZnCdSe quantum structures are investigasted for the effect of exciton localisation on the potential for opto-electronic applications. The investigation on ZnCdSe quantum dots as the active material in a laser diode and their temperature dependece show a transition from 0D-like to 2D-like characteristics limiting their capabiblity for devices. Furthermore, optimisation of electrical contacts due to a post-growth increase of the p-type doping level and efficient index guiding allowing a substantial decrease of losses improving the lifetime of laser diodes more than 20 times.

Keywords

Radiative Lifetime Laser Structure Threshold Current Density Mobility Edge Nitrogen Acceptor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
This is a preview of subscription content, log in to check access.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    S. Nakamura, Science 281, 956 (1998).CrossRefGoogle Scholar
  2. 2.
    for a review see D. Bimberg, M. Grundmann and N. N. Ledentsov, Quantum Dot Heterostructures, Wiley, (1999).Google Scholar
  3. 3.
    M. A. Haase, J. Qiu, J. M. DePuydt, and H. Cheng, Appl. Phys. Lett. 59, 2992 (1991).CrossRefGoogle Scholar
  4. 4.
    E. Kato, H. Noguchi, M. Nagai, H. Okuyama, S. Kijima, and A. Ishibashi, Electr. Lett. 34, 282 (1998).CrossRefGoogle Scholar
  5. 5.
    K. Kondo, H. Okuyama, and A. Ishibashi, Appl. Phys. Lett. 64, 3434 (1994).CrossRefGoogle Scholar
  6. 6.
    G. M. Haugen, S. Guha, H. Cheng, J. M. DePuydt, M. A. Haase, G. E. Höfler, J. Qiu, and B. J. Wu, Appl. Phys. Lett. 66, 358 (1994).CrossRefGoogle Scholar
  7. 7.
    N. N. Ledentsov, I. L. Krestnikov, M. V. Maksimov, S. V. Ivanov, S. V. Sorokin, P. S. Kop’ev, Zh.I. Alferov, D. Bimberg, and S. M. Sotomayor Torres, Appl. Phys. Lett. 69, 1343 (1996).CrossRefGoogle Scholar
  8. 8.
    Zh.I. Alferov, S. V. Ivanov, P. S. Kop’ev, A. V. Lebedev, N. N. Ledentsov, M. V. Maximov, I. V. Sedova, T. V. Shubina, and A. A. Toropov, Superl. and Microstr. 15, 65 (1994).CrossRefGoogle Scholar
  9. 9.
    A. V. Sakharov, S. V. Ivanov, S. V. Sorokin, I. L. Krestnikov, B. V. Volovik, N. N. Ledentsov, P. S. Kop’ev, Techn. Phys. Lett. 23, 305 (1997).CrossRefGoogle Scholar
  10. 10.
    M. Rabe, M. Lowisch, and F. Henneberger, J. Cryst.Growth 184/185, 248 (1998).Google Scholar
  11. 11.
    D. Schikora, S. Schwedhelm, D. J. As, K. Lischka, D. Litvinov, A. Rosenauer, D. Gerthsen, M. Strassburg, A. Hoffmann, and D. Bimberg, Appl. Phys. Lett. 76, 418 (2000).CrossRefGoogle Scholar
  12. 12.
    K. Maehashi, N. Yasui, Y. Murase, T. Ota, T. Noma, and H. Nakashima, J. Electr. Mat. 29, 542 (2000).CrossRefGoogle Scholar
  13. 13.
    S. V. Ivanov, A. A. Toropov, S. V. Sorokin, T. V. Shubina, I. V. Sedova, A. A. Sitnikova, P. S. Kopev, Zh. I. Alferov H.-J. Lugauer, G. Reuscher, M. Keim, F. Fischer, A. Waag, and G. Landwehr, Appl. Phys. Lett. 74, 498 (1999).CrossRefGoogle Scholar
  14. 14.
    R. Engelhardt, U. W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, and D. Gerthsen, J. Appl. Phys. 86, 5578 (1999).CrossRefGoogle Scholar
  15. 15.
    N. Peranio, A. Rosenauer, D. Gerthsen, S. V. Sorokin, I. V. Sedova, and S. V. Ivanov, Phys. Rev. B 61, 16015 (2000).CrossRefGoogle Scholar
  16. 16.
    F. Kreller, J. Puls, and F. Henneberger, Appl. Phys. Lett. 69, 2406 (1996).CrossRefGoogle Scholar
  17. 17.
    S. Yamaguchi, H. Kurusu, Y. Kawakami, Sz. Fujita, and Sg. Fujita, Phys. Rev. B 61, 10303 (2000). see also: A. Klochikhin, A. Reznetsky, S. Permogorov, T. Breitkopf, M. Grün, M. Hetterich, C. Klingshirn, V. Lyssenko, W. Langbein, and J. M. Hvam, Phys. Rev. B 59, 12947 (1999); L. E. Golub, S. V. Ivanov, E. L. Ivchenko, T. V. Shubina, A. A. Toropov, J. P. Bergman, G. R. Pozina, B. Monemar, and M. Wilander, Phys. Stat. Sol. (b) 205, 203 (1998).CrossRefGoogle Scholar
  18. 18.
    M. Strassburg, M. Dworzak, H. Born, R. Heitz, A. Hoffmann, M. Bartels, K. Lischka, D. Schikora, and J. Christen, Appl. Phys. Lett. 80, 473 (2002).CrossRefGoogle Scholar
  19. 19.
    K. P. O’Donnell, P. G. Middleton, in Properties of Wide Bandgap II-VI-Semiconductors, ed. R. Bhargava, INSPEC, emis Datareview series No. 17, 33 (1997).Google Scholar
  20. 20.
    M. Strassburg, M. Dworzak, A. Hoffmann, R. Heitz, U. W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, I. Kudryashov, K. Lischka, and D. Schikora, Phys. Stat. Sol. (a) 180, 281 (2000).CrossRefGoogle Scholar
  21. 21.
    E. Kurtz, M. Schmidt, M. Baldauf, S. Wachter, M. Grün, H. Kalt, C. Klingshirn, D. Litvinov, A. Rosenauer, and D. Gerthsen, Appl. Phys. Lett. 79, 1118 (2001).CrossRefGoogle Scholar
  22. 22.
    M. Strassburg, J. Christen, M. Dworzak, R. Heitz, A. Hoffmann, M. Bartels, K. Lischka, and D. Schikora, Phys. Stat. Sol. (b) 229, 529 (2002).CrossRefGoogle Scholar
  23. 23.
    T. Passow, K. Leonardi, H. Henke, D. Hommel, J. Seufert, G. Bacher, and A. Forchel, Phys. Stat. Sol. (b) 229, 497 (2002).CrossRefGoogle Scholar
  24. 24.
    M. Behringer, H. Wenisch, M. Fehrer, V. Grossmann, A. Isemann, M. Klude, H. Heinke, K. Ohkawa, and D. Hommel, Adv. Solid State Phys. 47, 47 (1997).Google Scholar
  25. 25.
    Y. Koide, T. Kawakami, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami, J. Appl. Phys. 82, 2393 (1997).CrossRefGoogle Scholar
  26. 26.
    P. M. Mensz, S. Herko, K. W. Haberern, J. Gaines, and C. Ponzoni, Appl. Phys. Lett. 63, 2800 (1993).CrossRefGoogle Scholar
  27. 27.
    Y. Fan, J. Han, L. He, J. Saraie, R. L. Gunshor, M. Hagerott, H. Jeon, A. V. Nurmikko, G. C. Hua, and N. Otsuka, Appl. Phys. Lett. 61, 3160 (1992).CrossRefGoogle Scholar
  28. 28.
    F. Hiei, M. Ikeda, M. Ozawa, T. Miyajima, and A. Ishibashi, and K. Akimoto, Electr. Lett. 29, 878 (1993).CrossRefGoogle Scholar
  29. 29.
    S. Tomiya, S. Kijima, H. Okuyama, H. Tsukamoto and T. Hino, S. Taniguchi, H. Noguchi, E. Kato, and A. Ishibashi, J. App. Phys. 86, 3616 (1999).CrossRefGoogle Scholar
  30. 30.
    T. Yasuda, I. Mitsuishi, and H. Kukimoto, Appl. Phys. Lett. 52, 57 (1988).CrossRefGoogle Scholar
  31. 31.
    M. Strassburg, M. Kuttler, U. W. Pohl, and D. Bimberg, Thin Solid Films 336, 208 (1998).CrossRefGoogle Scholar
  32. 33.
    M. Strassburg, O. Schulz, U. W. Pohl, D. Bimberg, M. Klude, and D. Hommel, Electr. Lett. 36, 878 (2000).CrossRefGoogle Scholar
  33. 34.
    M. Strassburg, O. Schulz, U. W. Pohl, D. Bimberg, S. Itoh, K. Nakano, A. Ishibashi, M. Klude, and D. Hommel, IEEE J. Select. Top. Quant. Electr. 7, 371 (2001).CrossRefGoogle Scholar
  34. 35.
    B. Mroziewicz, M. Bugajski, and W. Nakwaski: Physics of Semiconductor Lasers, North Holland, (1991).Google Scholar
  35. 36.
    R. Heitz, B. Lummer, V. Kutzer, D. Wiesmann, A. Hoffmann, I. Broser, E. Kurtz, S. Einfeldt and J. Nürnberger, B. Jobst, D. Hommel, and G. Landwehr, Mat. Science Forum 182–184, 259 (1995).CrossRefGoogle Scholar
  36. 37.
    U. W. Pohl, G. H. Kudlek, A. Klimakov, and A. Hoffmann, J. Cryst. Growth 138, 385 (1994).CrossRefGoogle Scholar
  37. 38.
    O. Schulz, M. Strassburg, U. W. Pohl, D. Bimberg, S. Itoh, K. Nakano, A. Ishibashi, M. Klude, and D. Hommel, Phys. Stat. Sol. 180, 213 (2000).CrossRefGoogle Scholar
  38. 39.
    M. Strassburg, O. Schulz, U. W. Pohl, D. Bimberg, S. Itoh, K. Nakano, and A. Ishibashi, Electr. Lett. 36, 44 (2000).CrossRefGoogle Scholar
  39. 40.
    M. Strassburg, O. Schulz, U. W. Pohl, D. Bimberg, M. Klude, and D. Hommel, J. Cryst. Growth 214/215, 1054 (2000).CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2002

Authors and Affiliations

  • Martin Strassburg
    • 1
  • O. Schulz
    • 1
  • Matthias Strassburg
    • 1
  • U. W. Pohl
    • 1
  • R. Heitz
    • 1
  • A. Hoffmann
    • 1
  • D. Bimberg
    • 1
  • M. Klude
    • 2
  • D. Hommel
    • 2
  • K. Lischka
    • 3
  • D. Schikora
    • 3
  1. 1.Institut für FestkörperphysikTechnische Universität BerlinBerlinGermany
  2. 2.Institut für FestkörperphysikUniversität BremenBremenGermany
  3. 3.Universität PaderbornPaderbornGermany

Personalised recommendations