IPDPS 2000: Parallel and Distributed Processing pp 1089-1091 | Cite as

Optoelectronic-VLSI Technology: Terabit/s I/O to a VLSI Chip

  • Ashok V. Krishnamoorthy
Conference paper
Part of the Lecture Notes in Computer Science book series (LNCS, volume 1800)

Abstract

The concept of a manufacturable technology that can provide parallel optical interconnects directly to a VLSI circuit, proposed over 15 years ago in [1], now appears to be a reality. One such optoelectronic-VLSI (OE-VLSI) technology is based on the hybrid flip-chip area-bonding of GaAs/AlGaAs Multiple-Quantum Well (MQW) electro-absorption modulator devices directly onto active silicon CMOS circuits. The technology has reached the point where batch-fabricated foundry shuttle incorporating multiple OE-VLSI chip designs are now being run [2]. These foundry shuttles represent the first delivery of custom-designed CMOS VLSI chips with surface-normal optical I/O technology. From a systems point of view, this represents an important step towards the entry of optical interconnects in that: the silicon integrated circuit is state-of-the-art; the circuit is unaffected by the integration process; and the architecture, design, and optimization of the chip can proceed independently of the placement and bonding to the optical I/O.

Keywords

Power Dissipation CMOS Technology CMOS Circuit VLSI Circuit IEEE Photonic Technology Letter 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer-Verlag Berlin Heidelberg 2000

Authors and Affiliations

  • Ashok V. Krishnamoorthy
    • 1
  1. 1.Bell LabsLucent TechnologiesHolmdel

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