IPDPS 2000: Parallel and Distributed Processing pp 1089-1091 | Cite as
Optoelectronic-VLSI Technology: Terabit/s I/O to a VLSI Chip
Abstract
The concept of a manufacturable technology that can provide parallel optical interconnects directly to a VLSI circuit, proposed over 15 years ago in [1], now appears to be a reality. One such optoelectronic-VLSI (OE-VLSI) technology is based on the hybrid flip-chip area-bonding of GaAs/AlGaAs Multiple-Quantum Well (MQW) electro-absorption modulator devices directly onto active silicon CMOS circuits. The technology has reached the point where batch-fabricated foundry shuttle incorporating multiple OE-VLSI chip designs are now being run [2]. These foundry shuttles represent the first delivery of custom-designed CMOS VLSI chips with surface-normal optical I/O technology. From a systems point of view, this represents an important step towards the entry of optical interconnects in that: the silicon integrated circuit is state-of-the-art; the circuit is unaffected by the integration process; and the architecture, design, and optimization of the chip can proceed independently of the placement and bonding to the optical I/O.
Keywords
Power Dissipation CMOS Technology CMOS Circuit VLSI Circuit IEEE Photonic Technology LetterPreview
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References
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