Analysis of the Disturbing Influence of Stray Fields in Very Small MRAM Cells by Computer Simulation
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Abstract
We present computer simulations of sub-μ magnetic tunnel junctions. The devices with the small element sizes show a pronounced shift of the minor loop into the opposite direction as obtained for larger junctions, which can be interpreted by dipolar antiferromagnetic coupling. The devices show too an asymmetrical behavior in the magnetization reversal. The simulation calculations confirm both experimental results.
Keywords
Exchange Bias Free Layer Magnetic Tunnel Junction Stray Field Sensor Layer
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