Introduction

Chapter
First Online:
Part of the Springer Tracts in Modern Physics book series (STMP, volume 182)

Abstract

The techniques described in this book are aimed at investigation of the properties of crystal with a spatial resolution that provides the view into the unit cell of the crystal. For this purpose, high-energy electrons are preferable, among all the different kinds of radiation that could be used. First, electrons possess a charge, and a beam of electrons can be focused in an inhomogeneous magnetic field, which allows the construction of an electromagnetic focusing lens. Among charged particles, electrons (and also positrons, but these are not useful here) possess the smallest mass, which minimizes the structural damage that they cause in the specimen. In the transmission electron microscope (TEM), electrons are accelerated to a few hundreds of keV. The de Broglie wavelength of the electrons is of the order of only a few picometers, and the point resolution of modern TEMs lies in the 0.1 nm range. In addition to the good spatial resolution, the strong interaction of the electrons with matter allows the interaction volume to be extremely small. One single column of only a few atoms is sufficient to determine the positions and, in principle, also the types of the atoms from the scattered electron wave.

Keywords

Specimen Thickness Tetragonal Distortion Atomic Column Composition Evaluation Elastic Relaxation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
This is a preview of subscription content, log in to check access.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    W. Grogger, F. Hofer, P. Warbichler, G. Kothleitner: Microsc. Microanal. 6, 161 (2000)Google Scholar
  2. 2.
    A. Ourmazd, D.W. Taylor, J. Cunningham, C.W. Tu: Phys. Rev. Lett. 62, 933 (1989)CrossRefADSGoogle Scholar
  3. 3.
    C. Kisielowski, P. Schwander, F.H. Baumann, M. Seibt, Y.O. Kim, A. Ourmazd: Ultramicroscopy 58, 131 (1995)CrossRefGoogle Scholar
  4. 4.
    A. Ourmazd, P. Schwander, C. Kisielowski, M. Seibt, F.H. Baumann, Y.O. Kim: Inst. Phys. Conf. Ser. 134: Section 1, 1 (1993)Google Scholar
  5. 5.
    J.-L. Maurice, P. Schwander, F.H. Baumann, A. Ourmazd: Ultramicroscopy 68, 149 (1997)CrossRefGoogle Scholar
  6. 6.
    D. Stenkamp, W. Jäger: Ultramicroscopy 50, 321 (1993)CrossRefGoogle Scholar
  7. 7.
    A. Rosenauer, D. Gerthsen: Adv. Imaging Electron Phys. 107, 121 (1999)CrossRefGoogle Scholar
  8. 8.
    A. Rosenauer, T. Remmele, U. Fischer, A. Förster, D. Gerthsen: “Strain determination in mismatched semiconductor heterostructures by the digital analysis of lattice images”. In: Microscopy of Semiconducting Materials 1997, Oxford, UK, April 7–10, 1997, Proceedings of the Royal Microscopical Society Conference, ed. by A.G. Cullis, J.L. Hutchison (Institute of Physics, Bristol, 1997) pp. 39–42Google Scholar
  9. 9.
    A. Rosenauer, T. Remmele, D. Gerthsen, K. Tillmann, A. Förster: Optik 105, 99 (1997)Google Scholar
  10. 10.
    A. Rosenauer, S. Kaiser, T. Reisinger, J. Zweck, W. Gebhardt, D. Gerthsen: Optik 102, 63 (1996)Google Scholar
  11. 11.
    D. Van Dyck, M. Op de Beeck: Ultramicroscopy 64, 99 (1996)CrossRefGoogle Scholar
  12. 12.
    H. Lichte: Ultramicroscopy 47, 223 (1992)CrossRefGoogle Scholar
  13. 13.
    H. Lichte, E. Völkl: Ultramicroscopy 47, 231 (1992)CrossRefGoogle Scholar
  14. 14.
    W.M.J. Coene, A. Thust, M. Op de Beeck, D. Van Dyck: Ultramicroscopy 64, 109 (1996)CrossRefGoogle Scholar
  15. 15.
    R. Hull, J.C. Bean: Critical Reviews in Solid State and Materials Sciences 17, 507 (1992)CrossRefGoogle Scholar
  16. 16.
    R. Bierwolf, M. Hohenstein, F. Phillipp, O. Brandt, G.E. Crook, K. Ploog: Ultramicroscopy 49, 273 (1993)CrossRefGoogle Scholar
  17. 17.
    P.H. Jouneau, A. Tardot, G. Feulliet, H. Marietta, J. Cibert: J. Appl. Phys. 75, 7310 (1994)CrossRefADSGoogle Scholar
  18. 18.
    M.D. Robertson, J.E. Curie, J.M. Corbett, J.B. Webb: Ultramicroscopy 58, 175 (1995)CrossRefGoogle Scholar
  19. 19.
    M.J. Hytch, L. Potez: Phil. Mag. A 76, 1119 (1997)CrossRefADSGoogle Scholar
  20. 20.
    M.J. Hytch: Microsc. Microanal. Microstruct. 8, 41 (1997)CrossRefGoogle Scholar
  21. 21.
    M.J. Hytch, E. Snoeck, R. Kilaas: Ultramicroscopy 74, 131 (1998)CrossRefGoogle Scholar
  22. 22.
    S. Christiansen, M. Albrecht, H.P. Strunk, H.J. Maier: Appl. Phys. Lett. 64, 3617 (1994)CrossRefADSGoogle Scholar
  23. 23.
    M.M.J. Treacy, J.M. Gibson: J. Vac. Sci. Technol. B 4, 1458 (1986)CrossRefADSGoogle Scholar
  24. 24.
    K. Tillmann, A. Thust, M. Lentzen, P. Swiatek, A. Förster, K. Urban, D. Gerthsen, T. Remmele, A. Rosenauer: Phil. Mag. Lett. 74, 309 (1996)CrossRefADSGoogle Scholar
  25. 25.
    A. Rosenauer, D. Van Dyck, M. Arzberger, G. Abstreiter: Ultramicroscopy 88, 51 (2001)CrossRefGoogle Scholar
  26. 26.
    A. Rosenauer, D. Van Dyck: “The effect of strain on the chemically sensitive imaging with the (002) reflection in sphalerite type crystals”. In: Proceedings of EUREM 12, Brno, Czech Republic, July 9–14, 2000, p. I121Google Scholar
  27. 27.
    A. Rosenauer, D. Gerthsen: Ultramicroscopy 76, 49 (1999)CrossRefGoogle Scholar
  28. 28.
    A. Rosenauer, U. Fischer, D. Gerthsen, A. Förster: Ultramicroscopy 72, 121 (1998)CrossRefGoogle Scholar
  29. 29.
    A. Rosenauer, D. Gerthsen, D. Van Dyck, M. Arzberger, G. Böhm, G. Abstreiter: Phys. Rev. B 64, 245334–245341 (2001)CrossRefADSGoogle Scholar
  30. 30.
    A. Rosenauer, W. Oberst, D. Litvinov, D. Gerthsen, A. Foerster, R. Schmidt: Phys. Rev. B 61, 8276 (2000)CrossRefADSGoogle Scholar
  31. 31.
    A.F. Tsatsulnikov, B.V. Volovik, N.N. Ledentsov, M.V. Maximov, A.Yu. Egorov, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, P.S. Kopev, Z.I. Alferov, I.A. Kozin, M.V. Belousov, I.P. Soshnikov, P. Werner, D. Litvinov, U. Fischer, A. Rosenauer, D. Gerthsen: J. Electron. Mater. 28, 537 (1999)CrossRefADSGoogle Scholar
  32. 32.
    A. Rosenauer, W. Oberst, D. Gerthsen, A. Förster: Thin Solid Films 357, 18 (1999)CrossRefADSGoogle Scholar
  33. 33.
    A. Rosenauer, U. Fischer, D. Gerthsen, A. Förster: Appl. Phys. Lett. 71, 3868 (1997)CrossRefADSGoogle Scholar
  34. 34.
    U. Woggon, W. Langbein, J.M. Hvam, A. Rosenauer, T. Remmele, D. Gerthsen: Appl. Phys. Lett. 71, 377 (1997)CrossRefADSGoogle Scholar
  35. 35.
    M. Strassburg, T. Deniozou, A. Hoffmann, S. Rodt, V. Turck, R. Heitz, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, S. Schwedhelm, I. Kudryashov, K. Lischka, D. Schikora: J. Cryst. Growth 214-215, 756 (2000)CrossRefADSGoogle Scholar
  36. 36.
    D. Gerthsen, A. Rosenauer, D. Litvinov, N. Peranio: J. Cryst. Growth 214-215, 707 (2000)CrossRefADSGoogle Scholar
  37. 37.
    D. Schikora, S. Schwedhelm, I. Kudryashov, K. Lischka, D. Litvinov, A. Rosenauer, D. Gerthsen, A. Strassburg, A. Hoffmann, D. Bimberg: J. Cryst. Growth 214-215, 698 (2000)CrossRefADSGoogle Scholar
  38. 38.
    M. Strassburg, M. Dworzak, A. Hoffmann, R. Heitz, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, I. Kudryashov, K. Lischka, D. Schikora: Phys. Status Solidi A 180, 281 (2000)CrossRefADSGoogle Scholar
  39. 39.
    N.N. Ledentsov, I.L. Krestnikov, M. Strassburg, R. Engelhardt, S. Rodt, R. Heitz, U.W. Pohl, A. Hoffmann, D. Bimberg, A.V. Sakharov, W.V. Lundin, A.S. Usikov, Z.I. Alferov, D. Litvinov, A. Rosenauer, D. Gerthsen: Thin Solid Films 367, 40 (2000)CrossRefADSGoogle Scholar
  40. 40.
    D. Litvinov, A. Rosenauer, D. Gerthsen, N.N. Ledentsov: Phys. Rev. B 61,16819 (2000)Google Scholar
  41. 41.
    N. Peranio, A. Rosenauer, D. Gerthsen, S.V. Sorokin, I.V. Sedova, S.V. Ivanov: Phys. Rev. B 61, 16015 (2000)CrossRefADSGoogle Scholar
  42. 42.
    M. Strassburg, T. Deniozou, A. Hoffmann, R. Heltz, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, S. Schwedhelm, K. Lischka, D. Schikora: Appl. Phys. Lett. 76, 685 (2000)CrossRefADSGoogle Scholar
  43. 43.
    D. Schikora, S. Schwedhelm, D.J. As, K. Lischka, D. Litvinov, A. Rosenauer, D. Gerthsen, M. Strassburg, A. Hoffmann, D. Bimberg: Appl. Phys. Lett. 76, 418 (2000)CrossRefADSGoogle Scholar
  44. 44.
    A. Rosenauer, N. Peranio, D. Gerthsen: “Investigation of CdSe/ZnSe quantum dot structures by composition evaluation by lattice fringe analysis”. In: Microscopy of Semiconducting Materials 1999, Oxford, UK, March 22–25, 1999, Proceedings of the Institute of Physics Conference, Institute of Physics Conference Series Number 164, ed. by A.G. Cullis, J.L. Hutchison, (Institute of Physics, Bristol, 1997)Google Scholar
  45. 45.
    R. Engelhardt, U.W. Pohl, D. Bimber, D. Litvinov, A. Rosenauer, D. Gerthsen: J. Appl. Phys. 86, 5578 (1999)CrossRefADSGoogle Scholar
  46. 46.
    I.L. Krestnikov, M. Strassburg, M. Caesar, A. Hoffmann, U.W. Pohl, D. Bimberg, N.N. Ledentsov, P.S. Kopev, Zh.I. Alferov, D. Litvinov, A. Rosenauer, D. Gerthsen: Phys. Rev. B 60, 8695 (1999)CrossRefADSGoogle Scholar
  47. 47.
    M. Strassburg, R. Heitz, V. Turck, S. Rodt, U.W. Pohl, A. Hoffmann, D. Bimberg, I.L. Krestnikov, V.A. Shchuxin, N.N. Ledentsov, Z.I. Alferov, D. Litvinov, A. Rosenauer, D. Gerthsen: J. Electron. Mater. 28, 506 (1999)CrossRefADSGoogle Scholar
  48. 48.
    K.G. Chinyama, K.P. O’Donnell, A. Rosenauer, D. Gerthsen: J. Cryst. Growth 203, 362 (1999)CrossRefADSGoogle Scholar
  49. 49.
    I.L. Krestnikov, S.V. Ivanov, P.S. Kopoev, N.N. Ledentsov, M.V. Maximov, A.V. Sakharov, S.V. Sorokin, A. Rosenauer, D. Gerthsen, C.M. Sotomayor-Torres, D. Bimberg, Zh.I. Alferov: Mater. Sci. Eng. B 51, 26 (1998)CrossRefGoogle Scholar
  50. 50.
    M. Strassburg, A.V. Kutzer, U.W. Pohl, A. Hoffmann, I. Broser, N.N. Ledentsov, D. Bimberg, A. Rosenauer, U. Fischer, D. Gerthsen, I.L. Krestnikov, M.V. Maximov, C.O. Kop: Appl. Phys. Lett. 72, 942 (1998)CrossRefADSGoogle Scholar
  51. 51.
    T. Reisinger, S. Lankes, M.J. Kastner, A. Rosenauer, F. Franzen, M. Meier, W. Gebhardt: J. Cryst. Growth 159, 510 (1996)CrossRefADSGoogle Scholar
  52. 52.
    A. Rosenauer, T. Reisinger, E. Steinkirchner, J. Zweck, W. Gebhardt: J. Cryst. Growth 152, 42 (1995)CrossRefADSGoogle Scholar
  53. 53.
    E. Schomburg, S. Brandl, S. Winnerl, K.F. Renk, N.N. Ledentsov, V.M. Ustinov, A. Zhukov, P.S. Kopev, H.W. Hubers, J. Schubert, H.P. Roser, A. Rosenauer, D. Litvinov, D. Gerthsen, J.M. Chamberlain: Physica E 7, 814 (2000)CrossRefADSGoogle Scholar
  54. 54.
    E. Schomburg, S. Brandl, K.F. Renk, N.N. Ledentsov, V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, A.Yu. Egorov, R.N. Kyutt, B.V. Volovik, P.S. Kopev, Zh.I. Alferov, A. Rosenauer, D. Litvinov, D. Gerthsen, D.G. Pavelev, Y.I. Koschurinov: Phys. Lett. A 262, 396 (1999)CrossRefADSGoogle Scholar
  55. 55.
    B. Neubauer, A. Rosenauer, D. Gerthsen, O. Ambacher, M. Stutzmann, M. Albrecht, H.P. Strunk: Mater. Sci. Eng. B 59, 182 (1999)CrossRefGoogle Scholar
  56. 56.
    B. Neubauer, A. Rosenauer, D. Gerthsen, O. Ambacher, M. Stutzmann: Appl. Phys. Lett. 73, 930 (1998)CrossRefADSGoogle Scholar
  57. 57.
    D. Gerthsen, E. Hahn, B. Neubauer, A. Rosenauer, O. Schön, M. Heuken: Phys. Status Solidi A 177, 145 (2000)CrossRefADSGoogle Scholar
  58. 58.
    I.P. Soshnikov, V.V. Lundin, A.S. Usikov, I.P. Kalmykova, N.N. Ledentsov, A. Rosenauer, B. Neubauer, D. Gerthsen: Semiconductors 34, 621 (2000)CrossRefADSGoogle Scholar
  59. 59.
    B. Neubauer, H. Widmann, D. Gerthsen, T. Stephan, H. Kalt, J. Bläsing, P. Veit, A. Krost, O. Schön, M. Heuken: “Structural properties, In distribution and photoluminescence of multiple InGaN/GaN quantum well structures”. In: Proceedings of International Workshop on Nitride Semiconductors, Nagoya, (Institute of Pure and Applied Physics, Tokyo, 2000) vol. 1002, p. 375Google Scholar
  60. 60.
    D. Gerthsen, B. Neubauer, A. Rosenauer, T. Stephan, H. Kalt, O. Schön, M. Heuken: Appl. Phys. Lett. 79, 2552 (2001)CrossRefADSGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2003

Personalised recommendations