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A new model for the Si-A center

  • J. R. Leite
  • M. J. Caldas
  • A. Fazzio
Part II. Theory
Part of the Lecture Notes in Physics book series (LNP, volume 175)

Abstract

The multiple scattering-Xa molecular cluster model is used to study the A center in silicon. We show that this center can be created by Jahn-Teller effects over substitutional oxygen impurity in the lattice. Our defect model provides a consistent explanation for the EPR experimental results obtained for the Si-A center.

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Copyright information

© Springer-Verlag 1983

Authors and Affiliations

  • J. R. Leite
    • 1
  • M. J. Caldas
    • 1
  • A. Fazzio
    • 1
  1. 1.Instituto de Fisica da Universidade de SãoSão Paulo, SPBrasil

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