Physics of Narrow Gap Semiconductors pp 463-467 | Cite as
Strong coupling between the resonant state and the crystal lattice in n-InSb
11. Impurities and Resonant States
First Online:
Abstract
The free electron capture cross section, σ, and the emission rate, ∝ , are determined as functions of temperature and hydrostatic pressure for the defect level which is resonant at ambient pressure but becomes bound at high pressures. For the level being resonant as well as bound both σ and ∝ are thermally activated what is proved to originate from strong defect — lattice coupling.
Keywords
Conduction Band Emission Rate Inverse Temperature Capture Cross Section Capture Cross
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
Preview
Unable to display preview. Download preview PDF.
References
- 1/.M. Końiczykowski, S.Porowski, and J.Chroboczek: Proc. XI Internat. Conf. Phys. Semicond. Warsaw 1972, Vol. 2 p.1050.Google Scholar
- 2/.L.Dmowski, M. Kończykowski, R. Piotrzkowski, and S. Porowski: phys. stat. sol. /b/ 73 /1976/K131.Google Scholar
- 3/.S.Porowski, M. Kończykowski, and J.Chroboczek: phys. stat. sol. /b/ 63 /1974/ 291.Google Scholar
- 4/.D.L.Losee, R.P.Khosla, D.K.Ranadive, and F.T.J.Smith: Solid State Commun. 13 /1973/ 819.Google Scholar
- 5/.J.M.Langer, U.Ogonowska, and A.Iller: Inst. Phys. Conf. Ser. No 43 /1979/ 277.Google Scholar
- 6/.C.H. Henry and D.V.Lang: Phys. Rev. B15 /1977/ 989.Google Scholar
- 7/.J.M.Langer: Proc. XV Internat. Conf. Phys. Semicond. Kyoto 1980, Journal Phys. Soc. Japan 49 Sup.A /1980/ 207.Google Scholar
Copyright information
© Springer-Verlag 1982