Advertisement

Numerical Simulation of Self-heating InGaP/GaAs Heterojunction Bipolar Transistors

  • Yiming Li
  • Kuen-Yu Huang
Conference paper
Part of the Lecture Notes in Computer Science book series (LNCS, volume 3516)

Abstract

We numerically simulate effects of the self-heating on the current-voltage characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs). A set of coupled nonlinear ordinary differential equations (ODEs) of the equivalent circuit of HBT is formed and solved numerically in the large-signal time domain. We decouple the corresponding ODEs using the waveform relaxation method and solve them with the monotone iterative method. The temperature-dependent energy band gap, the current gain, the saturation current, and the thermal conductivity are considered in the model formulation. The power-added efficiency and the 1-dB compression point of a three-finger HBT are calculated. This approach successfully explores the self-heating and the thermal coupling phenomena of the three-finger transistors under high power and high frequency conditions. The numerical algorithm reported here can be incorporated into electronic computer-aided design software to simulate ultra-large scale integrated and radio frequency circuits.

Keywords

Bipolar Transistor Current Gain Junction Temperature Heterojunction Bipolar Transistor Compression Point 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

  1. 1.
    Yanagihara, M., Sakai, H., Ota, Y., Tamura, A.: High fmax AlGaAs/GaAs HBT with L-shaped base electrode and its application to 50 GHz amplifier. Solid-State Electron 41, 1615–1620 (1997)CrossRefGoogle Scholar
  2. 2.
    Oka, T., Hirata, K., Suzuki, H., Ouchi, K., Uchiyama, H., Taniguchi, T., Mochizuki, K., Nakamura, T.: High-speed small-scale InGaP/GaAs HBT technology and its application to integrated circuits. IEEE Trans. Electron Devices 48, 2625–2630 (2001)CrossRefGoogle Scholar
  3. 3.
    Troyanovsky, B., Yu, Z., Dutton, R.W.: Physics-based simulation of nonlinear distortion in semiconductor devices using the harmonic balance method. Comput. Methods Appl. Mech. Engrg. 181, 467–482 (2000)zbMATHCrossRefGoogle Scholar
  4. 4.
    Zhu, Y., Twynam, J.K., Yagura, M., Hasegawa, M., Hasegawa, T., Eguchi, Y., Amano, Y., Suematsu, E., Sakuno, K., Matsumoto, N., Sato, H., Hashizume, N.: Self-heating effect compensation in HBTs and its analysis and simulation. IEEE Trans. Electron Devices 48, 2640–2646 (2001)CrossRefGoogle Scholar
  5. 5.
    Heckmann, S., Sommet, R., Nebus, J.-M., Jacquet, J.-C., Floriot, D., Auxemery, P., Quere, R.: Characterization and modeling of bias dependent breakdown and self-heating in GaInP/GaAs power HBT to improve high power amplifier design. IEEE Trans. Microwave Theory and Techniques 50, 2811–2819 (2002)CrossRefGoogle Scholar
  6. 6.
    Park, H.-M., Hong, S.: A novel temperature-dependent large-signal model of heterojunction bipolar transistor with a unified approach for self-heating and ambient temperature effects. IEEE Trans. Electron Devices 49, 2099–2106 (2002)CrossRefGoogle Scholar
  7. 7.
    Li, Y., Cho, Y.-Y., Wang, C.-S., Hung, K.-Y.: A Genetic Algorithm Approach to InGaP/GaAs HBT Parameters Extraction and RF Characterization. Jpn. J. Appl. Phys. 42, 2371–2374 (2003)CrossRefGoogle Scholar
  8. 8.
    Huang, K.-Y., Li, Y., Lee, C.-P.: A Time Domain Approach to Simulation and Characterization of RF HBT Two-Tone Intermodulation Distortion. IEEE Trans. Microwave Theory and Techniques 51, 2055–2062 (2003)CrossRefGoogle Scholar
  9. 9.
    Li, Y., Kuang, K.-Y.: A Novel Numerical Approach to Heterojunction Bipolar Transistor Circuit Simulation. Comput. Phys. Commun. 152, 307–316 (2003)CrossRefGoogle Scholar
  10. 10.
    Li, Y.: A Monotone Iterative Method for Bipolar Junction Transistor Circuit Simulation. WSEAS Trans. Mathematics 1, 159–164 (2002)CrossRefzbMATHGoogle Scholar
  11. 11.
    Liu, W.: Handbook of III-V Heterojunction Bipolar Transistor. John Wiley & Sons, Chichester (1998)Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2005

Authors and Affiliations

  • Yiming Li
    • 1
    • 2
  • Kuen-Yu Huang
    • 3
  1. 1.Department of Computational NanoelectronicsNational Nano Device LaboratoriesHsinchuTaiwan
  2. 2.Microelectronics and Information Systems Research CenterNational Chiao Tung UniversityHsinchuTaiwan
  3. 3.Institute of ElectronicsNational Chiao Tung UniversityHsinchuTaiwan

Personalised recommendations