Quantum Photovoltaic Devices Based on Antimony Compound Semiconductors

  • Y. Wei
  • A. Gin
  • M. Razeghi
Part of the Springer Series in Optical Sciences book series (SSOS, volume 118)

7 Conclusion

In summary, we have successfully developed the empirical tight-binding modeling for the design of Type II InAs/GaSb superlattices. We have demonstrated very high quality superlattice material growths using state-of-the-art MBE. With our established device processing techniques, we demonstrated high performance photodiodes and the world’s first infrared focal plane array in the LWIR range based on this type of superlattice. We also calculated the wavelength variations based on quantum confinement effects in the nanopillars and demonstrated the initial results for the processing of nanopillar photodiodes based on Type II superlattices.


Focal Plane Array Dark Current Density GaSb Substrate Indium Bump GaSb Layer 
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Copyright information

© Springer-Verlag London Limited 2006

Authors and Affiliations

  • Y. Wei
    • 1
  • A. Gin
    • 1
  • M. Razeghi
    • 1
  1. 1.Center for Quantum Devices, Electrical and Computer Engineering DepartmentNorthwestern UniversityEvanstonUSA

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