MEMS/NEMS pp 383-443 | Cite as

GaAs Thermally Based MEMS Devices—Fabrication Techniques, Characterization and Modeling

MEMS Device Design and Fabrication MEMS Device Thermo-Mechanical Characterization MEMS Device Thermo-Mechanical Modeling
  • Tibor Lalinský
  • Milan Držík
  • Jiří Jakovenko
  • Miroslav Husák

Abstract

Silicon (Si) based MicroElectroMechanical Systems (MEMS) are now well understood and widely used in various integrated micromachined microsensors and microactuators. In relation to this, gallium arsenide (GaAs) offers a number of material-related properties and technological advantages over Si [1]–[3]. These include well know properties, such as direct band gap transition and high electron mobility.

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Copyright information

© Springer Science+Business Media, Inc. 2006

Authors and Affiliations

  • Tibor Lalinský
    • 1
  • Milan Držík
    • 2
  • Jiří Jakovenko
    • 3
  • Miroslav Husák
    • 3
  1. 1.Institute of Electrical EngineeringSlovak Academy of SciencesBratislavaSlovakia
  2. 2.International Laser CenterBratislavaSlovakia
  3. 3.Dept. of MicroelectronicsCzech Technical UniversityPrague 6Czech Republic

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