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Advances in VLSI, Communication, and Signal Processing pp 673–681Cite as

Short Channel Effects (SCEs) Based Comparative Study of Double-Gate (DG) and Gate-All-Around (GAA) FinFET Structures for Nanoscale Applications

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Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 587))

Abstract

The FinFET device architecture is a leading contender in the field of electronic integrated circuits (ICs). A comparative study of double-gate (DG) and gate-all-around (GAA) FinFET structures on the ground of performance parameters like on-state current (ION), off-current (IOFF), subthreshold swing (SS), drain induced barrier lowering (DIBL) and threshold voltage (Vt) have been done. It has been found that GAA FinFETs are able to control the short channel effects (SCEs) more accurately over DG FinFETs when fin width to gate length ratio is properly optimized. Further, the comparison between rectangular and cylindrical channel GAA FinFETs has also done and found that cylindrical GAA FinFETs gives a better performance with respect to aforementioned parameters. All the numerical simulated results were performed on TCAD supported the stated findings.

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Authors and Affiliations

  1. Electronics and Communication Engineering Department, National Institute of Technology Warangal, Telangana, India

    Vadthiya Narendar

  2. Electronics and Communication Engineering Department, Institute of Engineering and Technology, Lucknow, Uttar Pradesh, India

    Richa Parihar

  3. Electronics and Communication Engineering Department, Motilal Nehru National Institute of Technology, Prayagraj, Uttar Pradesh, India

    Ashutosh Kumar Pandey

Authors
  1. Vadthiya Narendar
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  2. Richa Parihar
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  3. Ashutosh Kumar Pandey
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Corresponding author

Correspondence to Vadthiya Narendar .

Editor information

Editors and Affiliations

  1. Ministry of Electronics and Information Technology, New Delhi, Delhi, India

    Debashis Dutta

  2. Motilal Nehru National Institute of Technology Allahabad, Allahabad, Uttar Pradesh, India

    Haranath Kar

  3. Indian Institute of Technology (ISM), Dhanbad, Jharkhand, India

    Chiranjeev Kumar

  4. Motilal Nehru National Institute of Technology Allahabad, Allahabad, Uttar Pradesh, India

    Vijaya Bhadauria

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Narendar, V., Parihar, R., Pandey, A.K. (2020). Short Channel Effects (SCEs) Based Comparative Study of Double-Gate (DG) and Gate-All-Around (GAA) FinFET Structures for Nanoscale Applications. In: Dutta, D., Kar, H., Kumar, C., Bhadauria, V. (eds) Advances in VLSI, Communication, and Signal Processing. Lecture Notes in Electrical Engineering, vol 587. Springer, Singapore. https://doi.org/10.1007/978-981-32-9775-3_62

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  • DOI: https://doi.org/10.1007/978-981-32-9775-3_62

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-32-9774-6

  • Online ISBN: 978-981-32-9775-3

  • eBook Packages: EngineeringEngineering (R0)

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