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Ferroelectric-Gate Field Effect Transistor Memories pp 97–108Cite as

Switching in Nanoscale Hafnium Oxide-Based Ferroelectric Transistors

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Part of the book series: Topics in Applied Physics ((TAP,volume 131))

Abstract

The recent advent of ferroelectricity in thin hafnium oxide films has enabled an unprecedented scaling of ferroelectric field-effect transistors (FeFETs) based on this material. However, the small-area devices, which have the channel length of only a few tens of nanometers, show some striking performance differences when compared to the large-area ones. In this chapter, the switching of these nanoscale FeFETs will be investigated. In particular, novel switching phenomena will be pointed out, including the abrupt and stepwise switching transitions, the appearance of switching stochasticity and the evidence for the accumulative switching upon identical voltage excitations. These properties not only provide new and useful insights for memory applications but also set the basis for exploiting FeFETs for novel applications, such as neuromorphic and stochastic computing.

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Author information

Authors and Affiliations

  1. Nanoelectronic Materials Laboratory—NaMLab gGmbH, Noethnitzer Strasse 64a, 01187, Dresden, Germany

    Halid Mulaosmanovic, Uwe Schroeder, Thomas Mikolajick & Stefan Slesazeck

  2. IHM, Technische Universität Dresden, Noethnitzer Strasse 64, 01187, Dresden, Germany

    Thomas Mikolajick

Authors
  1. Halid Mulaosmanovic
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  2. Uwe Schroeder
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  3. Thomas Mikolajick
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  4. Stefan Slesazeck
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Corresponding author

Correspondence to Halid Mulaosmanovic .

Editor information

Editors and Affiliations

  1. School of Electrical and Computer Engineering, University of Seoul, Seoul, Korea (Republic of)

    Byung-Eun Park

  2. Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama, Japan

    Hiroshi Ishiwara

  3. Graduate School of Engineering Science, Osaka University, Osaka, Japan

    Masanori Okuyama

  4. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan

    Shigeki Sakai

  5. Advanced Materials Engineering for Information and Electronics, Kyunghee University, Yongin, Korea (Republic of)

    Sung-Min Yoon

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Mulaosmanovic, H., Schroeder, U., Mikolajick, T., Slesazeck, S. (2020). Switching in Nanoscale Hafnium Oxide-Based Ferroelectric Transistors. In: Park, BE., Ishiwara, H., Okuyama, M., Sakai, S., Yoon, SM. (eds) Ferroelectric-Gate Field Effect Transistor Memories. Topics in Applied Physics, vol 131. Springer, Singapore. https://doi.org/10.1007/978-981-15-1212-4_5

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