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Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions pp 39–74Cite as

Black Phosphorus

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Abstract

In this chapter, we firstly introduce basic properties and related literatures of black phosphorus, and then show experimental results obtained in this study. In semimetallic state above 1.4 GPa, we observed clear Shubnikov-de Haas oscillation and large magnetoresistance effect. From the analysis of Shubnikov-de Haas oscillations, we identified the light cyclotron mass and small carrier density near semiconductor-semimetal transition, which is comparable to bismuth and graphite. Fermi surfaces become monotonically larger as pressure increases, which indicates that the carrier density is tunable by hydrostatic pressure. Also, we quantitatively determined the carrier densities and mobilities of electrons and holes based on the two-carrier model, which confirmed the nearly compensated nature in the semimetallic state, and large mobility difference between electrons and holes. The large magnetoresistance observed in the semimetallic phase cannot be reproduced by conventional two-carrier model, which suggests additional mechanisms beyond the semiclassical framework.

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  1. Graduate School of Natural Science and Technology, Okayama University, Okayama, Japan

    Dr. Kazuto Akiba

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Akiba, K. (2019). Black Phosphorus. In: Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions. Springer Theses. Springer, Singapore. https://doi.org/10.1007/978-981-13-7107-3_3

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