Skip to main content
  • 457 Accesses

Abstract

A polished, monocrystalline silicon wafer is the starting material for solid state devices produced by silicon planar processing. In this chapter we consider four main topics concerning these wafers: (1) Why are they monocrystalline? (2) What are their crystalline properties? (3) How is their electrical resistivity related to doping? (4) How are wafers prepared from the raw source material of sand? In the next section we consider the crystal structure of silicon, the properties of its principal planes, and the reasons why certain of the planes are chosen for wafer faces.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

eBook
USD 16.99
Price excludes VAT (USA)
  • Available as EPUB and PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 109.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. W. Shockley, Electrons and Holes in Semiconductors. Princeton: Van Nostrand, 1950.

    Google Scholar 

  2. D. O. Townley, “Optimum Crystallographic Orientation for Silicon Device Fabrication,” Solid State Technol., 16, (1), 43–47, Jan. 1973.

    Article  Google Scholar 

  3. K. Wosnock, “How to Select the Right Scribing-Tool for Your Application,” Circuits Manuf., 15, (1), 75–80, Jan. 1973.

    Google Scholar 

  4. E. A. Wood, Crystals and Light. Princeton: Van Nostrand, 1964.

    Google Scholar 

  5. B. M. Berry, “EPITAXY.” In Fundamentals of Silicon Integrated Device Technology, Vol. 1, ed. R. M. Burger and R. P. Donovan, p. 435. Englewood Cliffs: Prentice-Hall, 1967.

    Google Scholar 

  6. B. G. Streetman, Solid State Electronic Devices, 2nd Ed. Englewood Cliffs: Prentice-Hall, 1980.

    Google Scholar 

  7. J. C. Irvin, “Resistivity of Bulk Silicon and of Diffused Layers in Silicon,” Bell Syst. Tech. J., 41, (2), 387–420, March 1962. Figure 1. This paper has been reprinted in Micro-and Thin-Film Electronics Readings, ed. S. N. Levine, pp. 213236. New York: Holt, Rinehart and Winston, 1964.

    Google Scholar 

  8. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1969.

    Google Scholar 

  9. A. B. Glaser and G. E. Subak-Sharpe, Integrated Circuit Engineering. Reading: Addison-Wesley, 1979.

    Google Scholar 

  10. F. A. Trumbore, “Solid Solubilities of Impurity Elements in Germanium and Silicon,” Bell Syst. Tech. J.,39 (1), 205–233, Jan. 1960. This paper has been reprinted in ed. S. N. Levine op. cit. [7].

    Google Scholar 

  11. J. Lenzing, “Survey of Semiconductor Crystal-Growing Processes and Equipment,” Solid State Technol., 19, (2), 34–39, 43, Feb. 1975.

    Google Scholar 

  12. P. Burggraaf, “Si Crystal Growth Trends,” Semicond. Int., 7, (10), 54–59, Oct. 1984.

    Google Scholar 

  13. P. Stallhofer and D. Huber, “Oxygen and Carbon Measurements on Silicon Slices,” Solid State Technol., 26, (8), 233–237, Aug. 1983.

    Google Scholar 

  14. H. M. Liaw, “Oxygen and Carbon in Silicon,” Semicond. Int., 2, (8), 71–82, Oct. 1979.

    Google Scholar 

  15. R. A. Craven and H. W. Korb, “Internal Gettering in Silicon,” Solid State Technol., 24, (7), 55–61, July 1981.

    Google Scholar 

  16. G. Fiegl, “Recent Advances and Future Directions in CZ-Silicon Crystal Growth Technology,” Solid State Technol., 26, (8), 121–131, Aug. 1983.

    Google Scholar 

  17. R. B. Herring, “Silicon Wafter Technology—State of the Art 1976,” Solid State Technol., 19, (6), 37–42, June 1975.

    Google Scholar 

  18. S. K. Ghandhi, The Theory and Practice of Microelectronics. New York: Wiley, 1968. Chapter 2.

    Google Scholar 

  19. J. H. Matlock, “Crystal Growing Spotlight,” Semicond. Int., 2, (8), 33–44, Oct. 1979.

    Google Scholar 

  20. B. D. Cullity, Elements of X-Ray Diffraction. Reading: Addison-Wesley, 1968.

    Google Scholar 

  21. G. Duncan, “Proposed Alphanumeric Marking Standards for 125 mm Silicon Wafers,” Solid State Technol., 23, (7), 54–55, July 1980.

    Google Scholar 

  22. J. E. Lawrence, “The Alchemist’s Dream: Wafer Recycling,” Circuits Manuf., 23, (5), 25–30, May 1983.

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

Copyright information

© 1990 Van Nostrand Reinhold

About this chapter

Cite this chapter

Anner, G.E. (1990). Wafers. In: Planar Processing Primer. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0441-5_2

Download citation

  • DOI: https://doi.org/10.1007/978-94-009-0441-5_2

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-6682-2

  • Online ISBN: 978-94-009-0441-5

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics