Abstract
Two-dimensional (2D) and three-dimensional (3D) electrostatic analyses of Schottky barrier carbon nanotube field effect transistors (CNTFETs) are carried out. Comparisons between 2D and 3D simulation results for symmetric and asymmetric structures indicate that 2D simulations do not describe the behavior of the device accurately, suggesting that to understand and improve the behavior of CNTFETs 3D electrostatic analysis is required.
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Pourfath, M., Ungersboeck, E., Gehring, A., Cheong, B.H., Kosina, H., Selberherr, S. (2004). Three-Dimensional Analysis of Schottky Barrier Carbon Nanotube Field Effect Transistors. In: Wachutka, G., Schrag, G. (eds) Simulation of Semiconductor Processes and Devices 2004. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0624-2_35
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DOI: https://doi.org/10.1007/978-3-7091-0624-2_35
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7212-4
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