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The EEM in Nipi Structures of Nonparabolic Semiconductors

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Book cover Effective Electron Mass in Low-Dimensional Semiconductors

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 167))

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Abstract

The concept of doping SLs was introduced by Esaki and Tsu [1] and extensive work in this subject was initiated by Dohler [2–15] . In the compositional SL the periodic potential is due to a change in the band gap of two materials. In doping SLs, the periodicity is space-charge induced and in addition a homogeneous material is used. With the advent of modern experimental techniques of fabricating nanomaterials, it is possible to grow semiconductor superlattices (SLs) composed of alternative layers of two different degenerate layers with controlled thickness.

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Authors and Affiliations

  1. Department of Electronics Systems Engineering, Nano Scale Device Research Laboratory, Indian Institute of Science, Bangalore, India

    Sitangshu Bhattacharya

  2. Department of Electronics and Communication Engineering, National Institute of Technology, Agartala, Tripura West, India

    Kamakhya Prasad Ghatak

Authors
  1. Sitangshu Bhattacharya
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  2. Kamakhya Prasad Ghatak
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Correspondence to Kamakhya Prasad Ghatak .

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Bhattacharya, S., Ghatak, K.P. (2012). The EEM in Nipi Structures of Nonparabolic Semiconductors. In: Effective Electron Mass in Low-Dimensional Semiconductors. Springer Series in Materials Science, vol 167. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-31248-9_2

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  • DOI: https://doi.org/10.1007/978-3-642-31248-9_2

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-31247-2

  • Online ISBN: 978-3-642-31248-9

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