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Technology that Accompanies the Development of Spintronics Devices

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The Physics of Ferromagnetism

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 158))

Abstract

I–V measurement of magnetic tunnel junction (MTJ) is very important for the characterization of tunnel junction. Measurement of I–V curve and analysis of the curve will be briefly explained. Also it is described that AFM and STM are useful tool in order to evaluate MTJ. Spin polarization of the electrodes of MTJ is very important value in order to fabricate a high TMR value junction. The measurement method of spin polarization using tunnel junction will be described. Finally, spin dynamics which is very important in order to apply MTJ for devices is described. Particularly, the experimental method of damping constant measurement, the data reported so far, and the origin of damping constant will be explained.

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Authors and Affiliations

  1. Department of Physics, Jilin University, Changchun, People’s Republic of China

    Hanmin Jin

  2. Advanced Inst. Materials Research, Tohoku University, Sendai, Japan

    Terunobu Miyazaki

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  1. Hanmin Jin
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  2. Terunobu Miyazaki
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Correspondence to Hanmin Jin .

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Jin, H., Miyazaki, T. (2012). Technology that Accompanies the Development of Spintronics Devices. In: The Physics of Ferromagnetism. Springer Series in Materials Science, vol 158. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-25583-0_14

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  • DOI: https://doi.org/10.1007/978-3-642-25583-0_14

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  • Print ISBN: 978-3-642-25582-3

  • Online ISBN: 978-3-642-25583-0

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