Abstract
This paper presents the effect of oxygen implantation in GaN epitaxial layer on sapphire substrate. Oxygen implantation was done at 80 keV in GaN sample with 5 × 1014 cm−2 dose. To reduce the implantation damage annealing of the sample was carried at 900 °C for 45 s. High Resolution X-Ray Diffraction (HRXRD), Raman Scattering and cathodoluminescence (CL) study has been done before and after annealing of implanted sample and compared with unimplanted GaN. Tensile strain was observed in the implanted sample by HRXRD and UV excited Raman scattering due to formation of vacancy clusters. After annealing implantation induced damage was restored and yellow luminescence (point defects) by CL were observed in the GaN sample.
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The authors acknowledge Director SSPL for his continuous support and for the permission to publish this work. Help from other colleagues are also acknowledged.
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Pandey, A., Raman, R., Chaudhaury, S.P., Kaur, D., Kapoor, A.K. (2019). Oxygen Ion Implantation Induced Effects in GaN Epilayer. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_46
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DOI: https://doi.org/10.1007/978-3-319-97604-4_46
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