Abstract
We report the room temperature ferromagnetism in Ag doped ZnO films grown by RF magnetron sputtering. X-ray diffraction of undoped and 2% Ag doped ZnO show the hexagonal wurtzite structure corresponding to c-axis (002) orientation. The presence of defects within Ag-doped ZnO films can be revealed by electron paramagnetic resonance. It has been observed that saturated magnetic moment increase as we increase the oxygen vacancies during deposition.
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Acknowledgements
One of the authors (NA) thanks UGC, Government of India, for the financial support through Basic Scientific Research fellowship. BS thanks DST-India for financial support under DST-INSPIRE Faculty programme.
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Ali, N., Singh, B., Khan, Z.A., Ghosh, S. (2019). Origin of Room Temperature Ferromagnetism in ZnO:Ag. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_179
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DOI: https://doi.org/10.1007/978-3-319-97604-4_179
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