Abstract
We have investigated the drain-source current (IDS) instability or drift due to continuous application of gate-source voltage (VGS) and drain-source voltage (VDS). For gate bias stress, both increasing and decreasing behavior of IDS has been observed and analyzed in terms of electron capture and emission respectively. A phenomenological model is used to explain the non-exponential decaying transients. Drain bias effect is small but noticeable in terms of 3% increase in IDS. Apart from bias-stress effect, the degradation of these devices is monitored by measuring the dark transfer characteristics at regular interval of time over a period of 1 month. The threshold voltage (VTh) changes are shown to be correlated with degradation in carrier mobility.
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References
B. Lee, A. Wan, D. Mastrogiovanni, J.E. Anthony, E. Garfunkel, V. Podzorov, Phys. Rev. B 82, 085302 (2010)
H.H. Choi, M.S. Kang, M. Kim, H. Kim, J.H. Cho, K. Cho, Adv. Funct. Mater. 23, 690–696 (2013)
S. Singh, Y.N. Mohapatra, J. Appl. Phys. 120, 045501 (2016)
S. Singh, Y.N. Mohapatra, Org. Electron. 51, 128–136 (2017)
T. Umeda, D. Kumaki, S. Tokito, Org. Electron. 9, 545–549 (2008)
B. Gunduzand, F. Yakuphanoglu, Sens. Actuators A 178, 141–153 (2012)
Acknowledgements
We thank Indo-German Science and Technology Council (IGSTC) and Department of Science & Technology (DST) New Delhi for financial support. We also thank National Centre for Flexible Electronics, IIT Kanpur, India, for providing all kind of support and facilities in carrying out experiments.
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Singh, S., Mohapatra, Y.N. (2019). Degradation and Bias-Stress Effect in TIPS-Pentacene Based Organic Thin Film Transistors with Polymer Dielectric. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_165
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DOI: https://doi.org/10.1007/978-3-319-97604-4_165
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