Abstract
Titanium oxide in combination with Silicon dioxide is extensively used for the facet coating of laser diodes besides other applications for high reflectance coating. Stable stoichiometric TiO2 film deposition is very challenging with the conventional reactive e-beam deposition and often oxygen deficiency is observed in the deposited film, and hence the optical constants of the film are much inferior to the bulk crystalline TiO2. This oxygen deficiency is also observed in case of SiO2 film but is less pronounced than that of TiO2. Stoichiometric TiO2 film is deposited by ion beam sputtering and incorporated in the SiO2/TiO2 stack deposited on GaAs (100) substrate to evaluate their suitability for high reflectance coating application. The exact composition of the TiO2 film is evaluated by X-ray photoelectron spectroscopy (XPS) technique. The surface roughness of the SiO2 and TiO2 film deposited on GaAs (100) is measured by atomic force microscopy (AFM). The interface and surface roughness; the thicknesses of the individual layers are evaluated by X-ray reflectivity (XRR) technique. The reflectance of the SiO2/TiO2 bi-layer is measured by UV-Visible-NIR spectrophotometer. The high quality of the films with low level of interface roughness, good stoichiometry and stable layer thickness were established by the above measurements.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
H.K. Pulker et al., Refractive indices of TiO2 film produced by reactive evaporation of various titanium-oxygen phases. Appl. Opt. 15(12), 2986–2991 (1976)
D. Ristau et al., Ion beam sputter coatings for laser technology, in Proceedings SPIE 5963, Advances in Optical Thin Films II, 596313 (04 Oct 2005)
P.J. Martin et al., Ion based methods for optical thin film deposition. J. Mater. Sci. 21, 1–25 (1986)
N. Uekawa, M. Watanabe, K. Kaneko, F. Mizukami, J. Chem. Soc., Faraday Trans. 91, 2161 (1995)
W.E. Slinkard, P.B. Degroot, J. Catal. 68, 423 (1981)
P.-O. Larsson, A. Anderson, L.R. Wallenberg, B. Svensson, J. Catal. 163, 279 (1996)
M. Murata, K. Wakino, S. Ikeda, J. Electron Spectrosc. Relat. Phenom. 6, 459 (1975)
M. Takagi-Kawai, M. Soma, T. Onishi, K. Tamaru, Can. J. Chem. 58, 2132 (1980)
V.I. Nefedov, D. Gati, B.F. Dzhurinskii, N.P. Sergushin, Y.V. Salyn, Zh. Neorg. Khimii 20, 2307 (1975)
Acknowledgements
The authors wish to thank Dr. R. K. Sharma, The Director, Solid State Physics Laboratory for his encouragement and for permission to present this work. The authors also wish to thank Dr. Ashok Kapoor and Dr. R. Raman for providing the Characterisation facility at SSPL. The authors are grateful to Mr. Sanjay Kumar form LASTEC for the deposition of the films by IBD. The authors are also grateful to Mr. Anand Kumar, Ms. Garima Upadhaya and Mr. Sandeep Dalal for the characterisation work.
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2019 Springer Nature Switzerland AG
About this paper
Cite this paper
Mohanty, D.K., Goyal, A., Chandhok, K., Jain, A. (2019). Stable Optical Quality SiO2/TiO2 Stack Development for the Facet Coating of Laser Diodes. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_148
Download citation
DOI: https://doi.org/10.1007/978-3-319-97604-4_148
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-97603-7
Online ISBN: 978-3-319-97604-4
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)