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Silicon Etching Characteristics in Modified TMAH Solution

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Book cover The Physics of Semiconductor Devices (IWPSD 2017)

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 215))

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Abstract

In the present work, we have studied the etching characteristics of Si{100} and Si{110} in modified low concentration TMAH solution by adding different concentrations of NH2OH. The etch rate of silicon and thermal oxide, and etched surface morphology, which are important parameters to be known in the fabrication of MEMS structures using silicon wet bulk micromachining, have been studied in modified TMAH solution. In addition, the effect of aging time of the etchant solution on the etching characteristics is investigated.

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Acknowledgements

This work was supported by the DST and the CSIR, New Delhi, India.

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Authors and Affiliations

  1. MEMS and Micro/Nano Systems Laboratory, Department of Physics, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, India

    Veerla Swarnalatha, Avvaru Venkata Narasimha Rao & Prem Pal

Authors
  1. Veerla Swarnalatha
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  2. Avvaru Venkata Narasimha Rao
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  3. Prem Pal
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Corresponding author

Correspondence to Veerla Swarnalatha .

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Editors and Affiliations

  1. Solid State Physics Laboratory, Delhi, India

    R. K. Sharma

  2. Solid State Physics Laboratory, Delhi, India

    D.S. Rawal

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Swarnalatha, V., Rao, A.V.N., Pal, P. (2019). Silicon Etching Characteristics in Modified TMAH Solution. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_121

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