Abstract
Over 30 years ago Leon Chua proposed the existence of a new class of passive circuit elements, which he called memristors and memristive devices. The unique electrical characteristics associated with them, along with the advantages of crossbar structures, have the potential to revolutionize computing architectures. Being associated with the totally nonlinear behavior of individual memristive elements, circuits of multiple memristors may work in very complicated way, quite difficult to predict, due to the polarity-dependent nonlinear variation in the memory resistance (memristance) of individual memristors. A well defined and effective memristor model for circuit design combined with a design paradigm which exploits the composite behavior of memristive elements, based on well understood underlying logic design principles, would certainly accelerate research on nanoscale circuits and systems. Towards this goal, we explore the dynamics of regular network geometries containing only memristive devices and present a memristor crossbar circuit design paradigm in which memristors are modeled using the quantum mechanical phenomenon of tunneling. We use this circuit model to test various logic circuit designs capable of universal computation, and finally, we develop and present a novel design paradigm for memristor-based crossbar circuits.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Chua, L.O.: Memristor—the missing circuit element. IEEE Trans. Circuit Theory 18, 507–519 (1971)
Williams, R.: How we found the missing memristor. IEEE Spectr. 45(2), 28–35 (2008)
Strukov, D.B., Snider, G.S., Stewart, D.R., Williams, R.S.: The missing memristor found. Nature 453, 80–83 (2008)
Heath, J.R., Kuekes, P.J., Snider, G.S., Williams, R.S.: A defect-tolerant computer architecture: opportunities for nanotechnology. Science 280, 1716–1721 (1998)
Snider, G.S., Kuekes, P.J., Williams, R.S.: CMOS-like logic in defective, nanoscale crossbars. Nanotechnology 15, 881–891 (2004)
Snider, G.S., Williams, R.S.: Nano/CMOS architectures using a field-programmable nanowire interconnect. Nanotechnology 18, 035204 (2007)
Strukov, D.B., Likharev, K.K.: CMOL FPGA: a reconfigurable architecture for hybrid digital circuits with two-terminal nanodevices. Nanotechnology 16, 888–900 (2005)
Yang, J.J., Borghetti, J., Murphy, D., Stewart, D.R., Williams, R.S.: A family of electronically reconfigurable nanodevices. Adv. Mater. 21, 3754–3758 (2009)
Schiff, L.I.: Quantum Mechanics, 3rd edn. Int. Series in Pure. and Appl. Physics, pp. 100–104. McGraw-Hill, New York (1968)
Vourkas, I., Sirakoulis, G.Ch.: A novel design and modeling paradigm for memristor-based crossbar circuits. IEEE Trans. Nanotechnol. 11(6), 1151–1159 (2012)
Easy Java Simulations. http://fem.um.es/Ejs/, Cited 15 June 2013
Stan, M.R., Franzon, P.D., Goldstein, S.C., Lach, J.C., Ziegler, M.M.: Molecular electronics: from devices and interconnect to circuits and architecture. Proc. IEEE 91, 1940–1957 (2003)
SIA/Sematech: International Technology Roadmap for Semiconductors (ITRS). http://www.itrs.net, Cited 15 June 2013 (2000)
Jo, S.H., Kim, K.-H., Lu, W.: Programmable resistance switching in nanoscale two-terminal devices. Nano Lett. 9(1), 496–500 (2009)
Kim, K.-H., et al.: A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications. Nano Lett. 12, 389–395 (2012)
Lu, W., Kim, K.-H., Chang, T., Gaba, S.: Two-terminal resistive switches (Memristors) for memory and logic applications. In: 16th Asia and South Pacific Design Automation Conf. (ASP-DAC 2011), pp. 217–223 (2011)
Rahaman, S.Z., et al.: Excellent resistive switching memory: influence of GeOx in WOx mixture. In: VLSI Technology Int. Symp. Syst. and Applications (VLSI-TSA 2012), pp. 1–2 (2012)
Mondal, S., Her, J.-L., Chen, F.-H., Shih, S.-J., Pan, T.-M.: Improved resistance switching characteristics in Ti-doped Yb2O3 for resistive nonvolatile memory devices. IEEE Electron Device Lett. 33(6), 1–3 (2012)
Yu, S., Wu, Y., Jeyasingh, R., Kuzum, D., Philip Wong, H.-S.: An electronic synapse device based on metal oxide resistive switching memory for neuromorphic computation. IEEE Trans. Electron Devices 58(8), 2729–2737 (2011)
Kim, H.-D., An, H.-M., Lee, E.B., Kim, T.G.: Stable bipolar resistive switching characteristics and resistive switching mechanisms observed in aluminum nitride-based ReRAM devices. IEEE Trans. Electron Devices 58(10), 3566–3573 (2011)
Wong, H.-S.P., et al.: Metal-oxide RRAM. Proc. IEEE 100(6), 1951–1970 (2012)
Ebong, I.E., Mazumder, P.: Self-controlled writing and erasing in a memristor crossbar memory. IEEE Trans. Nanotechnol. 10(6), 1454–1462 (2011)
Eshraghian, K., et al.: Memristor MOS content addressable memory (MCAM): hybrid architecture for future high performance search engines. IEEE Trans. Very Large Scale Integr. (VLSI) Syst. 19(8), 1407–1416 (2011)
Strukov, D.B., Williams, R.S.: Four-dimensional address topology for circuits with stacked multilayer crossbar arrays. Proc. Natl. Acad. Sci. 106(48), 20155–20158 (2009)
Vontobel, P.O., et al.: Writing to and reading from a nano-scale crossbar memory based on memristors. Nanotechnology 20(42), 425204 (2009)
Williams, R.S.: Finding the missing memristor. Keynote talk at UC San Diego CNS Winter 2010 Research Review. http://cns.ucsd.edu/files_2010/january_2010/agenda2010winterreivew.pdf, Cited 15 June 2013
Joklekar, Y.N., Wolf, S.J.: The elusive memristor: properties of basic electrical circuits. Eur. J. Phys. 30, 661–675 (2009)
Strukov, D.B., Borghetti, J.L., Williams, R.S.: Coupled ionic and electronic transport model of thin-film semiconductor memristive behavior. Small 5(9), 1058–1063 (2009)
Strukov, D.B., Williams, R.S.: Exponential ionic drift: fast switching and low volatility of thin-film memristors. Appl. Phys. A, Mater. Sci. Process. 94, 515–519 (2009)
Di Ventra, M., Pershin, Yu.V., Chua, L.O.: Circuit elements with memory: memristors, memcapacitors and meminductors. Proc. IEEE 97(10), 1717–1724 (2009)
Chua, L.O., Kang, S.M.: Memristive devices and systems. Proc. IEEE 64, 209–223 (1976)
Pershin, Yu.V., Di Ventra, M.: Practical approach to programmable analog circuits with memristors. IEEE Trans. Circuits Syst. I, Regul. Pap. 57(8), 1857–1864 (2010)
Shin, S., Kim, K., Kang, S.: Memristor applications for programmable analog ICs. IEEE Trans. Nanotechnol. 10(2), 266–274 (2011)
Liu, L., et al.: Engineering oxide resistive switching materials for memristive device application. Appl. Phys. A, Mater. Sci. Process. 102(4), 991–996 (2011)
Xu, N., et al.: Characteristics and mechanism of conduction/set process in TiN/ZnO/Pt resistance switching random-access memories. Appl. Phys. Lett. 92, 232112 (2008)
Yakopcic, C., Taha, T.M., Subramanyam, G., Pino, R.E.: Memristor SPICE modeling. In: Advances in Neuromorphic Memristor Science and Applications. Springer Series in Cognitive and Neural Systems vol. 4, pp. 211–244 (2012)
Ziegler, M.M., Stan, M.R.: CMOS/nano co-design for crossbar-based molecular electronic systems. IEEE Trans. Nanotechnol. 2, 217–230 (2003)
Yan, H., et al.: Programmable nanowire circuits for nanoprocessors. Nat. Lett. 470, 240–244 (2011)
Xia, Q.F., et al.: Memristor-CMOS hybrid integrated circuits for reconfigurable logic. Nano Lett. 9, 3640–3645 (2009)
Borghetti, J., et al.: A hybrid nanomemristor/transistor logic circuit capable of self-programming. Proc. Natl. Acad. Sci. 106(6), 1699–1703 (2009)
Pickett, M.D., et al.: Switching dynamics in titanium dioxide memristive devices. J. Appl. Phys. 106, 074508 (2009)
Linn, E., Rosezin, R., Kugeler, C., Waser, R.: Complementary resistive switches for passive nancrossbar memories. Nat. Mater. 9(5), 403–406 (2010)
Liu, T., Kang, Y., Verma, M., Orlowski, M.K.: Witching characteristics of antiparallel resistive switches. IEEE Trans. Electron Device Lett. 33(3), 429–431 (2012)
Kavehei, O., Al-Sarawi, S., Cho, K.-R., Eshraghian, K., Abbott, D.: An analytical approach for memristive nanoarchitectures. IEEE Trans. Nanotechnol. 11(2) (2012)
Dong, M., Zhong, L.: Nanowire crossbar logic and standard cell-based integration. IEEE Trans. Very Large Scale Integr. (VLSI) Syst. 17(8), 997–1007 (2009)
Ho, Y., Huang, G.M., Li, P.: Dynamical properties and design analysis for nonvolatile memristor memories. IEEE Trans. Circuits Syst. I, Regul. Pap. 58(4), 724–736 (2011)
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2014 Springer International Publishing Switzerland
About this chapter
Cite this chapter
Vourkas, I., Sirakoulis, G.C. (2014). Modeling Memristor-Based Circuit Networks on Crossbar Architectures. In: Adamatzky, A., Chua, L. (eds) Memristor Networks. Springer, Cham. https://doi.org/10.1007/978-3-319-02630-5_23
Download citation
DOI: https://doi.org/10.1007/978-3-319-02630-5_23
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-02629-9
Online ISBN: 978-3-319-02630-5
eBook Packages: Computer ScienceComputer Science (R0)