Abstract
Insulated gate bipolar transistor (IGBT) is the critical component in Module multilevel converter (MMC) submodule and is aged under operating condition. As the voltage rating of MMC-HVDC power transmission continues raising, high voltage press-pack IGBT (PPI) will be used widely. Condition monitoring of high voltage PPI is very important to maintain the reliable operation of MMC-HVDC. The purpose of this paper is to use on-state collector-emitter voltage during power cycling experiment as degradation indicator of high voltage PPI. On-state collector-emitter voltage is largely influenced by collector current and junction temperature. The impact of collector current can be ignored in this experiment because the current remains 350A. Junction temperature is very difficult to be directly measured, but gate internal resistance can indirectly reflect the junction temperature. Gate internal resistance can be calculated by peak gate current obtained together with on-state collector-emitter voltage during power cycling experiment. The on-state collector-emitter was measured under different junction temperature when the PPIs are under the same degradation degree. The results show that there is a linear relationship between on-state collector-emitter voltage and junction temperature. The linear relationship is used to strip the influence of junction temperature on on-state collector-emitter voltage obtained during power cycling experiment. After stripping the influence of junction temperature, the results show that the on-state collector-emitter voltages of test PPI samples all increase with the degradation continuing. On-state collector-emitter voltage can be utilized to be degradation indicator of high voltage PPIs.
This is a preview of subscription content, log in via an institution.
Buying options
Tax calculation will be finalised at checkout
Purchases are for personal use only
Learn about institutional subscriptionsReferences
Deng, E., Zhao, Z., Lin, Z., Han, R., Huang, Y.: Influence of temperature on the pressure distribution within press pack IGBTs. IEEE Trans. Power Electr. 33(7), 6048–6059 (2018)
Shengqi, Z., Luowei, Z., Pengju, S.: Monitoring potential defects in an IGBT module based on dynamic changes of the gate current. IEEE Trans. Power Electron. 28(3), 1479–1487 (2013)
Yang, S., Xiang, D., Bryant, A., Mawby, P., Ran, L., Tavner, P.: Condition monitoring for device reliability in power electronic converters: a review. IEEE Trans. Power Electron. 25(11), 2734–2752 (2010)
Gunturi, S., Schneider, D.: On the operation of a press pack IGBT module under short circuit conditions. IEEE Trans. Adv. Packag. 29(3), 433–440 (2006)
Liu, J., Zhang, G., Chen, Q., Qi, L., Geng, Y., Wang, J.: In situ condition monitoring of IGBTs based on the miller plateau duration. IEEE Trans. Power Electron. 34(1), 769–782 (2019)
Smet, V., et al.: Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling. IEEE Trans. Industr. Electron. 58(10), 4931–4941 (2011)
Oh, H., Han, B., McCluskey, P., Han, C., Youn, B.D.: Physics-of-failure, condition monitoring, and prognostics of insulated gate bipolar transistor modules: a review. IEEE Trans. Power Electron. 30(5), 2413–2426 (2015)
Singh, A., Anurag, A., Anand, S.: Evaluation of Vce at inflection point for monitoring bond wire degradation in discrete packaged IGBTs. IEEE Trans. Power Electron. 32(4), 2481–2484 (2017)
Baker, N., Munknielsen, S., Iannuzzo, F., Iannuzzo, F.: IGBT junction temperature measurement via peak gate current. IEEE Trans. Power Electron. 13(5), 3784–3793 (2016)
Poller, T., Basler, T., Hernes, M., D’Arco, S., Lutz, J.: Mechanical analysis of press-pack IGBTs. Microelectron. Reliab. 52(10), 2397–2402 (2012)
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2020 Springer Nature Switzerland AG
About this paper
Cite this paper
Zhan, C., Zhu, L., Liu, C., Pan, L., Liu, J., Ji, S. (2020). Condition Monitoring of High Voltage Press-Pack IGBT with On-State Collector-Emitter Voltage. In: Németh, B. (eds) Proceedings of the 21st International Symposium on High Voltage Engineering. ISH 2019. Lecture Notes in Electrical Engineering, vol 598. Springer, Cham. https://doi.org/10.1007/978-3-030-31676-1_89
Download citation
DOI: https://doi.org/10.1007/978-3-030-31676-1_89
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-030-31675-4
Online ISBN: 978-3-030-31676-1
eBook Packages: EngineeringEngineering (R0)