Abstract
This chapter is dedicated to the description of the most effective techniques and analytical test equipment required for the experimental research of interaction processes of high-velocity microparticles with various protective materials.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
J.F. Leavy, R.A. Роll, Radiation induced integrated circuit latch-up. IEEE Trans. Nucl. Sci NS-16(6), 96–103 (1969)
A.B. Greben, Designing of Analog Integrated Curcuits (Energiya, Moscow, 1976), p. 256
H.T. Gates, R.E. Darling, Technique for obtaining hardened semiconductor devices by Irradiating Wafers. IEEE Trans. Nucl. Sci NS-17(6), 183–187 (1970)
B. Matisich, Problems of calculating a low-noise integrated preamplifier. Pap. Inst. Electr. Electron. Eng 53(6), 753 (1965)
R. Lacoe, CMOS scaling, design principles and hardening-by-design methodologies, 2003 IEEE NSREC. Short Course “Radiation effects in advanced commercial technologies: how design scaling has affected the selection of spaceborne electronics”. July 2003, Monterey, California. pp. 111–142.
F.P. Korshunov, Y.V. Bogatyrev, A.I. Belous, S.V. Shvedov, S.B. Lastovsky, V.I. Kulgachev, Influence of the Electric Mode on Radiation Change in Parameters of MOS Transistors. in Radiation Resistance of Electronic Systems −Stoikost 2005: Materials of the All-Russian Scientific Conference, Lytkarino, Russia, June 7–8, 2005. Moscow Engineering Physics Institute (MEPhI). Moscow, 2005. pp. 163−164
F.P. Korshunov, Y.V. Bogatyrev, S.B. Lastovsky, V.I. Kulgachev, A.I. Belous, S.V. Shvedov, Relaxation Processes in Irradiated Transistor Bipolar and MOS Structures, in Radiation Physics of Solids: Proceedings of the XVII International Meeting, Sevastopol, July 9−14, 2007. Research Institute of Promising Materials and Technologies at Moscow State Institute of Electronics and Mathematics (TU); editorial board: G.G. Bondarenko et al. Moscow, 2007. pp. 678−684
F.P. Korshunov, Y.V. Bogatyrev, A.I. Belous, S.V. Shvedov, S.B. Lastovsky, V.I. Kulgachev, Influence of gamma radiation on parameters of various transistor MOS structures and elements of integrated circuits. Rep. Belarusian State Univ. Inf. Radio Electron 1(17), 67–72 (2007)
F.P. Korshunov, Y.V. Bogatyrev, A.I. Belous, S.V. Shvedov, N.F. Golubev, S.B. Lastovsky, V.I. Kulgachev, Ensuring the Performance of Various Promising Semiconductor Devices under Radiation Exposure, in Microwave Equipment and Telecommunication Technologies: Proceedings of the 17th International Crimean Conference (KryMiKo2007), Sevastopol, September 10−14, 2007. Sevastopol. Weber, 2007. vol. 2. pp. 651−654
F.P. Korshunov, Y.V. Bogatyrev, A.I. Belous, S.V. Shvedov, S.B. Lastovsky, Methods of Radiation Research of CMOS Integrated Circuits, in Problems of Atomic Science and Technology. Ser.: Physics of Radiation Exposure of Radio-Electronic Equipment. 2003. vol. 4. pp. 57−60
D.V. Boichenko, L.N. Kessarinsky, A.A. Borisov, S.V. Shvedov, A Comparative Study of the Radiation Behavior of ICs in Voltage Regulators, in Radiation Resistance of Electronic Systems −Stoikost 2005: Stoikost 2005: Materials of the All-Russian Scientific Conference, Lytkarino, Russia, June 7−8, 2005. Moscow Engineering Physics Institute (MEPhI). Moscow, 2005. pp. 81−82
A.S. Artamonov, S.L. Malyugin, S.V. Shvedov, G.I. Usov, Study of Radiation Resistance of Quick-Acting CMOS ICs of 1594T Series, in Radiation Resistance of Electronic Systems − Resistance 2003: Proceedings of the All-Russian Scientific Conference, Lytkarino, Russia, June 3−4, 2003. Moscow Engineering Physics Institute (MEPhI). Moscow, 2003. pp. 71−72
A.V. Kirgizova, A.G. Petrov, I.B. Yashanin, S.V. Shvedov, G.I. Usov, Comparative assessment of resistance levels for similar LSI RAM CMOS on SOS and SOI structures in relation to ionizing effects, in Radiation resistance of electronic systems − Resistance 2006: Proceedings of the All-Russian Scientific Conference, Lytkarino, Russia, June 6−7, 2006. Moscow Engineering Physics Institute (MEPhI). Moscow, 2006. pp. 69−70
A.I. Belous, V.P. Bondarenko, L.N. Dolgy, V.S. Malyshev, A.V. Mudry, V.S. Syakersky, S.V. Shvedov, Photoluminescent Study of SOI Structures, in Current Problems of Solid State Physics − Solid State Physics 2007: Materials of the International Conference, Minsk, October 23−26, 2007. Publishing House of the BSU; editorial board: N.M. Olekhnovich et al. Minsk, 2007. vol. 2. pp. 12−15
D.V. Boychenko, L.N. Kessarinsky, S.V. Shvedov, A Comparative Study of the Radiation Behavior of Analog ICs, in Radiation Resistance of Electronic Systems − Resistance 2007: Proceedings of the All-Russian Scientific Conference, Lytkarino, Russia, June 5−6, 2007. Moscow Engineering Physics Institute (MEPhI). Moscow, 2007. pp. 17−18
V.S. Figurov, V.V. Baikov, V.V. Shelkovnikov, A.S. Artamonov, S.V. Shvedov, Main Results of Radiation Tests of Series 5584 Chips, in Radiation Resistance of Electronic Systems − Resistance 2007: Proceedings of the All-Russian Scientific Conference, Lytkarino, Russia, June 5−6, 2007. Moscow Engineering Physics Institute (MEPhI). Moscow, 2007. pp. 35−36
V.S. Figurov, V.V. Baikov, V.V. Shelkovnikov, S.V. Shvedov, Experimental Evaluation of the Minimum Possible Value of the Trouble-Free Work Level of 5584IE10T Chips According to Test Results Obtained on BARS-4 and GU-200, in Radiation Resistance of Electronic Systems − Resistance 2007: Proceedings of the All-Russian Scientific Conference, Lytkarino, Russia, June 5−6, 2007. Moscow Engineering Physics Institute (MEPhI). Moscow, 2007. pp. 37−38
O.A. Kalashnikov, Y. NikiforovA, V.A. Emelyanov, A.V. Pribylsky, S.V. Shvedov, Studies of radiation resistance of EPROM 1568PP1, in Radiation Resistance of Electronic Systems − Resistance 2001: Proceedings of the All-Russian Scientific Conference, Lytkarino, Russia, June 5−6, 2001. Moscow Engineering Physics Institute (MEPhI). M., 2001. pp. 53−54
A.V. Yanenko, A.V. Kirgizova, S.V. Shvedov, G.I. Usov, Study Results for Radiation Resistance of Test RAM LSI, in Radiation Resistance of Electronic Systems − Resistance 2004: Proceedings of the All-Russian Scientific Conference, Lytkarino, Russia, June 1−2, 2004. Moscow Engineering Physics Institute (MEPhI). Moscow, 2004. pp. 71−72
A.V. Yanenko, A.V. Kirgizova A.G. Petrov, A.A. Demidov, G.I. Usov, S.V. Shvedov, Sampling Time Control for Data of RAM LSI CMOS at a Dosage Exposure, in Radiation Resistance of Electronic Systems −Stoikost 2005: Proceedings of the All-Russian Scientific Conference, Lytkarino, Russia, June 1−2, 2004. Moscow Engineering Physics Institute (MEPhI). Moscow, 2004. pp. 209−210
V.P. Bondarenko, Y.V. Bogatirev, L.N. Dolgyi, A.M. Dorofeev, A.K. Panfilenko, S.V. Shve-dov, G.N. Troyanova, N.N. Vorozov, V.A. Yakovtseva, 1.2 μmCMOS/SOIonporoussilicon. in Physical and Technical Problems of SOI Structuresand Devices. ed. by J.P. Colinge et.al. (Kluwer Academic Publishers, The Netherlands, 1995), pp. 275–280
N.V. Aliyeva, A.I. Belous, V.P. Bondarenko, L.N. Dolgy, V.A. Labunov, V.S. Malyshev, A.V. Mudry, S.A. Soroka, G.I. Usov, S.V. Shvedov, Study of SRAM 8K LSI Based on SOI Structures, in Problems of Development of Promising Micro Electronic Systems − 2006 (Micro Electronic Systems 2006): Collection of papers of the II Russian Scientific and Technical Conference, Moscow, October 9−13, 2006. Institute of Design Problems in Microelectronics of the Russian Academy of Sciences. Moscow, 2006. pp. 289−294
F.P. Korshunov, V. Bogatyrev, A.I. Belous, S.V. Shvedov, S.B. Lastovsky, V.I. Kulgachev, V.A. Gurinovich, Radiation Effects in Bipolar and CMOS Integrated Circuits, in Microwave Equipment and Telecommunication Technologies: Proceedings of the 18th International Crimean Conference (KryMiKo 2008), Sevastopol, September 8−12, 2008. Sevastopol. Weber, 2008. vol. 2. pp. 659−661
V.A. Giry et al., Effect of Irradiation Temperature on Radiative Processes in MIS structures. Optoelectron. Semicond. Equip (2), 78–81 (1982)
A.I. Demchenko, V.S. Syakersky, S.V. Shvedov, V.P. Bondarenko, L.N. Dolgy, V. Bogatyrev, Study of Radiation-Resistant Element Base of VLSI CMOS on SOI Bodies, in Microwave Equipment and Telecommunication Technology: Proceedings of the 19th International Crimean Conference (KryMiKo 2009), Sevastopol, September 14−18, 2009. Sevastopol. Weber, 2009. vol. 2. pp. 728−729
J.P. Mitchell, Radiation-induced space-charge buildup in MOS structures. IEEE Trans. Electron Dev ED-14(11), 764–774 (1967)
A.G. Holmes-Siedle, K.H. Zaininger, The physics of failure of MIS devices under radiation. IEEE Trans. Reliability R-17(1), 34–44 (1968)
A.A. Witteles, Neutron radiation effects on MOS FETs: theory and experiment. IEEE Trans. Nucl. Sci NS-15(6), 126–132 (1968)
C.W. Gwyn, Model for radiation-induced charge trapping and annealing in the oxide layer of MOS devices. J. Appl. Phys 40(12), 4886–4892 (1969)
D.V. Lang, Deep-level transient spectroscopy: A new method to characterize traps in semiconductors. J. Appl. Phys 45(7), 3023–3032 (1974)
B. Lox, S.T. Newstadter, Transient response of p-n-junction. J. Appl. Phys 25, 1148–1154 (1984)
L.S. Berman, A.A. Lebedev, Capacitive Spectroscopy of Deep Centers in Semiconductors (Nauka, Leningrad, 1981), p. 176
V.S. Vavilov, V.F. Kiselev, B.N. Mukhashev, Defects in Silicon and on Its Surface (Nauka, Moscow, 1990), p. 216
V.P. Markevich, L.I. Murin, Selective capture of interstitial carbon atoms in irradiated silicon. Phys. Technol. Semicond 22(5), 911–914 (1988)
V.P. Markevich et al., Defect reactions associated with divacancy elimination in silicon. J. Phys.: Condensed Matter 15, S2779–S2789 (2003)
M.G. Milvidsky, V.V. Cheldyshev, Nano-sized atomic clusters in semiconductors – a new approach to formation of properties of materials. Overview Phys. Technol. Semicond 32(5), 513–522 (1998)
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 2019 Springer Nature Switzerland AG
About this chapter
Cite this chapter
Belous, A., Saladukha, V., Shvedau, S. (2019). Methods and Equipment for Studying the Processes of the Interaction of High-Velocity Streams of Microparticles with Materials. In: High Velocity Microparticles in Space. Springer, Cham. https://doi.org/10.1007/978-3-030-04158-8_2
Download citation
DOI: https://doi.org/10.1007/978-3-030-04158-8_2
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-030-04157-1
Online ISBN: 978-3-030-04158-8
eBook Packages: EngineeringEngineering (R0)