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  • Book
  • © 2001

Lattice Properties

Supplement to Vols. III/17a, 22a (Print Version). Revised and Updated Edition of Vols. III/17a, 22a (CD-ROM)

Editors:

  1. O. Madelung
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  2. U. Rössler
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  3. M. Schulz
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  • Standard reference book with selected and easily retrievable data from the fields of physics and chemistry collected by acknowledged international scientists
  • Includes supplementary material: sn.pub/extras

Part of the book series: Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology - New Series (LANDOLT 3, volume 41A1a)

Part of the book sub series: Condensed Matter (LANDOLT 3)

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Table of contents (270 chapters)

  1. Boron phosphide (BP) phonon dispersion, wavenumbers and frequencies

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-3

  2. Boron phosphide (BP) Grüneisen parameters, phonon eigenvectors, mean square displacements

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-4

  3. Boron phosphide (BP) elastic moduli

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-3

  4. Boron phosphide (BP) bulk modulus

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-4

  5. Boron phosphide (BP) internal strain, effectice charges

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-3

  6. Boron phosphide (BP) dielectric constants

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-3

  7. Boron phosphide (BP) piezoelectric constant, third-order susceptibility

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-2

  8. Boron arsenide (BAs) structure, phase transitions

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-4

  9. Boron arsenide (BAs) lattice parameters, thermal expansion

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-3

  10. Boron arsenide (BAs) phonon dispersion, phonon wavenumbers

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-5

  11. Boron arsenide (BAs) elastic moduli, bulk modulus

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-4

  12. Boron arsenide (BAs) internal strain, effective charge, dielectric constant, third-order susceptibility

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-2

  13. Aluminum nitride (AlN) structure

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-3

  14. Aluminum nitride (AlN) phase diagram, equation of state, phase transition parameters

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-5

  15. Aluminum nitride (AlN) lattice parameters

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-9

  16. Aluminum nitride (AlN) thermal expansion

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-5

  17. Aluminum nitride (AlN) phonon dispersion curves, density of state

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-12

  18. Aluminum nitride (AlN) specific heat, thermal conductivity

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-4

  19. Aluminum nitride (AlN) phonon spectra, phonon wavenumbers

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-19

  20. Aluminum nitride (AlN) Grüneisen parameters, phonon line width and shift

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-8
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About this book

Volumes III/17a-i and III/22a, b (supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements and III-V, II-VI and I-VII compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well-known experts in the field of semiconductors. To meet the demands of today's scientists and to offer a complete overview of semiconductor data, all data available so far are published in the following way: a series of five subvolumes covers only the supplementary data to volumes III/17 and 22. Each subvolume includes a CD-ROM containing a complete, revised and updated edition of all relevant data. For each individual substance the information is presented in user-friendly documents containing data, figures and references. Easy access to the documents is provided via substance and property keywords, listings and full text retrieval.
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