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  • © 2005

High Dielectric Constant Materials

VLSI MOSFET Applications

  • High-dielectric-constant materials have a huge potential for applications in microelectronic devices.

  • This book provides the most comprehensive survey on their properties, processing and applications

  • Includes supplementary material: sn.pub/extras

Part of the book series: Springer Series in Advanced Microelectronics (MICROELECTR., volume 16)

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eBook USD 229.00
Price excludes VAT (USA)
  • ISBN: 978-3-540-26462-0
  • Instant PDF download
  • Readable on all devices
  • Own it forever
  • Exclusive offer for individuals only
  • Tax calculation will be finalised during checkout
Softcover Book USD 299.99
Price excludes VAT (USA)
Hardcover Book USD 399.99
Price excludes VAT (USA)

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Table of contents (21 chapters)

  1. Front Matter

    Pages I-XXIV
  2. The Economic Implications of Moore's Law

    • G.D. Hutcheson
    Pages 1-30
  3. Classical Regime for SiO2

    1. Oxide Reliability Issues

      • R. Degraeve
      Pages 91-120
  4. Future Directions for Ultimate Scaling Technology Generations

    1. High-k Crystalline Gate Dielectrics: A Research Perspective

      • F.J. Walker, R.A. McKee
      Pages 607-637

About this book

Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.

Keywords

  • CMOS
  • Leistungsfeldeffekttransistor
  • Technologie
  • VLSI
  • circuit
  • dielectrics
  • electronic structure
  • field-effect transistor
  • history
  • integrated circuit
  • material
  • metal oxide semiconductur field-effect transistor
  • semiconductor
  • silicon
  • transistor

Editors and Affiliations

  • International SEMATECH, Austin, USA

    H.R. Huff

  • Motorola, Austin, USA

    D.C. Gilmer

Bibliographic Information

Buying options

eBook USD 229.00
Price excludes VAT (USA)
  • ISBN: 978-3-540-26462-0
  • Instant PDF download
  • Readable on all devices
  • Own it forever
  • Exclusive offer for individuals only
  • Tax calculation will be finalised during checkout
Softcover Book USD 299.99
Price excludes VAT (USA)
Hardcover Book USD 399.99
Price excludes VAT (USA)