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Table of contents

About this book

Introduction

The book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crystal surface and segregation-enhanced diffusion.
It is complete with tables, graphs and figures, which allow fast determination of suitable growth parameters for practical applications.

Keywords

crystal diffusion epitaxy film segregation surface

Bibliographic information

  • DOI https://doi.org/10.1007/BFb0109574
  • Copyright Information Springer-Verlag 1999
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Springer Book Archive
  • Print ISBN 978-3-540-65794-1
  • Online ISBN 978-3-540-48955-9
  • Series Print ISSN 0081-3869
  • Series Online ISSN 1615-0430
  • Buy this book on publisher's site